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F2002

Specifications TotalDeviceDissipation Junction to Case Thermal MaximumJunction Resistance StorageTemperature DC DrainCurrent Temperature Drain toGate Voltage Drain toSource Voltage Gate toSource Voltage 30Watts 6/W 200 -65 to 150 1.6 A 70V 70V 30VDescriptionSilicon VDMOS a...

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SeekIC No. : 004339934 Detail

F2002: Specifications TotalDeviceDissipation Junction to Case Thermal MaximumJunction Resistance StorageTemperature DC DrainCurrent Temperature Drain toGate Voltage Drain toSource Voltage Ga...

F2002 Data Sheet

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Part Number:
F2002
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Specifications

Total
Device
Dissipation
 Junction to
Case Thermal		 Maximum
Junction Resistance
Storage
Temperature		 DC Drain
Current Temperature 		Drain to
Gate Voltage 		Drain to
Source Voltage		 Gate to
Source Voltage
30Watts 6/W 200 -65 to 150 1.6 A 70V 70V 30V





Description

Silicon VDMOS and LDMOS transistors F2002 designed specifically for broadband RF applications.

F2002 is Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others."Polyfet"process features gold metal for greatly extended lifetime. Low output capacitance and highFTenhance broadband performance.






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