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FCI7N60, FCI9036C2, FCI9036CI

Table of contents:
Info of FCI7N60
Info of FCI9036C2
Info of FCI9036CI

FCI7N60, FCI9036C2, FCI9036CI Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-262 D/C:08+

FCI7N60, FCI9036C2, FCI9036CI Datasheet download

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Part Number: FCI7N60

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-262

D/C: 08+

Description: MOSFET N-CHAN 600V I2PAK

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FCI7N60 Parameters

Technical/Catalog Information	FCI7N60
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	7A
Rds On (Max) @ Id, Vgs	600 mOhm @ 3.5A, 10V
Input Capacitance (Ciss) @ Vds	920pF @ 25V
Power - Max	83W
Packaging	Tube
Gate Charge (Qg) @ Vgs	30nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FCI7N60 FCI7N60

FCI7N60 General Description

SuperFET^TM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

FCI7N60 Maximum Ratings

Symbol	Parameter		FCI11N60		Unit
V_DSSI_DI_DMV_GSSE_ASI_ARE_ARdv/dt P_DT_J, T_STGT_L	Drain-Source Voltage Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C) Drain Current - Pulsed Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (T_C = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds	(Note 1) (Note 2) (Note 1) (Note 1) (Note 3)	600 7 4.4 21 ± 30 230 7 8.3 4.5 83 0.67 -55 to +150 300		V A A A V mJ A mJ V/ns W W/°C °C °C

FCI7N60 Features

• 650V @TJ = 150°C
• Typ. R_DS(on) = 0.53Ω
• Ultra Low Gate Charge (typ. Qg = 25nC)
• Low Effective Output Capacitance (typ. Cosseff. = 60pF)
• 100% Avalanche Tested

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