Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 30 V
Drain-Source Breakdown Voltage
: 600 V
Continuous Drain Current
: 11 A
Package / Case
: TO-262
Resistance Drain-Source RDS (on)
: 0.38 Ohms
Features: • 650V @TJ = 150°C
• Typ. RDS(on) = 0.32Ω
• Ultra Low Gate Charge (typ. Qg = 40nC)
• Low Effective Output Capacitance (typ. Cosseff. = 95pF)
• 100% Avalanche TestedSpecifications
|
Symbol |
Parameter |
FCI11N60 |
Unit |
|
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL |
Drain-Source Voltage
Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds |
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
|
600
11
7
33
± 30
340
11
12.5
4.5
125
1.0
-55 to +150
300 |
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C |
DescriptionFCI11N60 SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This FCI11N60 advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Parameters: | Technical/Catalog Information | FCI11N60 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 5.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1490pF @ 25V |
| Power - Max | 125W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 52nC @ 10V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FCI11N60
FCI11N60
|
FCI11N60 Data Sheet
