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FD-ACER-01, FDAF59N30, FDAF62N28

Table of contents:
Info of FD-ACER-01
Info of FDAF59N30
Info of FDAF62N28

FD-ACER-01, FDAF59N30, FDAF62N28 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-3PF D/C:08+

FD-ACER-01, FDAF59N30, FDAF62N28 Datasheet download

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Part Number: FDAF59N30

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-3PF

D/C: 08+

Description: MOSFET N-CHAN 280V 36A TO-3PF

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FDAF59N30 Parameters

Technical/Catalog Information	FDAF59N30
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	34A
Rds On (Max) @ Id, Vgs	56 mOhm @ 17A, 10V
Input Capacitance (Ciss) @ Vds	4670pF @ 25V
Power - Max	161W
Packaging	Tube
Gate Charge (Qg) @ Vgs	100nC @ 10V
Package / Case	TO-3PF
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDAF59N30 FDAF59N30

FDAF59N30 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

FDAF59N30 Maximum Ratings

Symbol	Parameter	FDAF59N30	Unit
V_DSS I_DI_DMV_GSS E_ASI_AR E_AR dv/dt P_DT_J, T_STGT_L	Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds	300 34 20 136 ±30 1734 34 16.1 4.5 161 1.3 -55 to +150 300	V AA A V mJ A mJ V/ns W W/°C °C °C

FDAF59N30 Features

• 34A, 300V, RDS(on) = 0.056Ω @VGS = 10 V
• Low gate charge ( typical 77 nC)
• Low Crss ( typical 80 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FDAF62N28 Parameters

Technical/Catalog Information	FDAF62N28
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	280V
Current - Continuous Drain (Id) @ 25° C	36A
Rds On (Max) @ Id, Vgs	51 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds	4630pF @ 25V
Power - Max	165W
Packaging	Tube
Gate Charge (Qg) @ Vgs	100nC @ 10V
Package / Case	TO-3PF
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDAF62N28 FDAF62N28

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