FDA28N50F

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 28 A
Package / Case : TO-3PN
Resistance Drain-Source RDS (on) : 0.175 Ohms


Specifications

      

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
FDA28N50F	Full Production	RoHS Compliant	$5.46	TO-3PN	3	RAIL	N/A	Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &E&3 (3-Digit Date Code) Line 2: FDA Line 3: 28N50F

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDA28N50F is available. Click here for more information .

Description

These FDA28N50F N-Channel enhancement mode power field effecttransistors are produced using Failchild?s proprietary, planarstripe, DMOS technology.

This advance technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalancheand commutation mode. These device FDA28N50F are well suited for highefficient switched mode power supplies and active power factorcorrection.

Parameters:

Technical/Catalog Information	FDA28N50F
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	28A
Rds On (Max) @ Id, Vgs	175 mOhm @ 14A, 10V
Input Capacitance (Ciss) @ Vds	5387pF @ 25V
Power - Max	310W
Packaging	Tube
Gate Charge (Qg) @ Vgs	105nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDA28N50F FDA28N50F