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MFG:FSCFAIRCHILD  Package Cooled:TO-3P  D/C:08+  

FDA50N50 Product Image

FDA Series Datasheet download

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Part Number: FDA50N50

 

MFG: FSCFAIRCHILD

Package Cooled: TO-3P

D/C: 08+

Description: These N-Channel enhancement mode power field effect transis-tors are produced using Fairchild's...


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FDA50N50 General Description


  These N-Channel enhancement mode power field effect transis-tors are produced using Fairchild's proprietary, planar stripe,DMOS technology.

  This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-cient switched mode power supplies and active power factor correction.

FDA50N50 Maximum Ratings

Symbol Parameter FDH50N50/FDA50N50 Unit
VDSS Drain-Source Voltage 500 V
ID Drain Current    - Continuous (TC = 25) 
                         - Continuous (TC = 100)
48
30.8
A
A
IDM
Drain Current    - Pulsed                  (Note 1)
192 A
VGSS Gate-Source voltage ±20
V
EAS
Single Pulsed Avalanche Energy     (Note 2)
1868 mJ
IAR Avalanche Current                          (Note 1) 48 A
EAR Repetitive Avalanche Energy          (Note 1) 62.5 mJ
dv/dt Peak Diode Recovery dv/dt            (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25) 
                              - Derate above 25
625
5
W
W/°C
TJ,  TSTG Operating and Storage Temperature Range -55 to +150  
TL Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds
300  

FDA50N50 Features

* 48A, 500V, RDS(on)  = 0.105 @VGS  = 10 V
* Low gate charge ( typical 105 nC)
* Low Crss ( typical  45 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FDA50N50 datasheet

FDA50N50
PDF/DataSheet Download

  • Datasheet: FDA50N50
  • File Size: 227969 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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