FDA50N50

MOSFET 500V NCH MOSFET

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FDA50N50 Picture
SeekIC No. : 00155986 Detail

FDA50N50: MOSFET 500V NCH MOSFET

floor Price/Ceiling Price

US $ 2.5~3.41 / Piece | Get Latest Price
Part Number:
FDA50N50
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~244
  • 244~250
  • 250~500
  • 500~1000
  • Unit Price
  • $3.41
  • $3.14
  • $2.87
  • $2.5
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 48 A
Resistance Drain-Source RDS (on) : 0.105 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Resistance Drain-Source RDS (on) : 0.105 Ohms
Continuous Drain Current : 48 A
Package / Case : TO-3P


Features:

* 48A, 500V, RDS(on)  = 0.105 @VGS  = 10 V
* Low gate charge ( typical 105 nC)
* Low Crss ( typical  45 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability



Specifications

Symbol Parameter FDH50N50/FDA50N50 Unit
VDSS Drain-Source Voltage 500 V
ID Drain Current    - Continuous (TC = 25) 
                         - Continuous (TC = 100)
48
30.8
A
A
IDM
Drain Current    - Pulsed                  (Note 1)
192 A
VGSS Gate-Source voltage ±20
V
EAS
Single Pulsed Avalanche Energy     (Note 2)
1868 mJ
IAR Avalanche Current                          (Note 1) 48 A
EAR Repetitive Avalanche Energy          (Note 1) 62.5 mJ
dv/dt Peak Diode Recovery dv/dt            (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25) 
                              - Derate above 25
625
5
W
W/°C
TJ,  TSTG Operating and Storage Temperature Range -55 to +150  
TL Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds
300  



Description

  These FDA50N50 N-Channel enhancement mode power field effect transis-tors are produced using Fairchild's proprietary, planar stripe,DMOS technology.

  This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices FDA50N50 are well suited for high effi-cient switched mode power supplies and active power factor correction.




Parameters:

Technical/Catalog InformationFDA50N50
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C48A
Rds On (Max) @ Id, Vgs105 mOhm @ 24A, 10V
Input Capacitance (Ciss) @ Vds 6460pF @ 25V
Power - Max625W
PackagingTube
Gate Charge (Qg) @ Vgs137nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDA50N50
FDA50N50



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