FDA59N25

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 59 A
Package / Case : TO-3PN
Resistance Drain-Source RDS (on) : 0.049 Ohms


Features:

* 59A, 250V, R_DS(on) = 0.049@V_GS= 10 V
* Low gate charge (typical 63 nC)
* Low C_rss(typical 70 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability




Specifications

Symbol	Parameter	FDA59N25	Unit
VDSS	Drain-Source Voltage	250	V
VDS(Avalanche)	Repetitive Avalanche Voltage (Note 1, 2)	300	V
ID	Drain Current - Continuous (TC = 25) - Continuous (TC = 100)	59 35	A A
IDM	Drain Current - Pulsed (Note 1)	236	A
VGSS	Gate-Source voltage	±30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	1458	mJ
IAR	Avalanche Current (Note 1)	59	A
EAR	Repetitive Avalanche Energy (Note 1)	39.2	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
PD	Power Dissipation (TC = 25) - Derate above 25	392 3.2	W W/
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150
TL	Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds	300

Product	Product status	Eco Status	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
FDA59N25	Full Production	RoHS Compliant	TO-3PN	3	RAIL	TBD	Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &E&3 (3-Digit Date Code) Line 2: FDA Line 3: 59N25

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDA59N25 is available. Click here for more information .

Description

These FDA59N25 N-Channel enhancement mode power field effect transis-tors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices FDA59N25 are well suited for high effi-cient switched mode power supplies and active power factor correction.

Parameters:

Technical/Catalog Information	FDA59N25
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	59A
Rds On (Max) @ Id, Vgs	49 mOhm @ 29.5A, 10V
Input Capacitance (Ciss) @ Vds	4020pF @ 25V
Power - Max	392W
Packaging	Tube
Gate Charge (Qg) @ Vgs	82nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDA59N25 FDA59N25