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FDB52N20TM, FDB54N20, FDB5645

Table of contents:
Info of FDB52N20TM
Info of FDB54N20
Info of FDB5645

FDB52N20TM, FDB54N20, FDB5645 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-263(D2PAK) D/C:06+

FDB52N20TM, FDB54N20, FDB5645 Datasheet download

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Part Number: FDB52N20TM

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-263(D2PAK)

D/C: 06+

Description: MOSFET N-CH 60V 80A TO-263AB

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FDB52N20TM Parameters

Technical/Catalog Information	FDB52N20TM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	52A
Rds On (Max) @ Id, Vgs	49 mOhm @ 26A, 10V
Input Capacitance (Ciss) @ Vds	2900pF @ 25V
Power - Max	357W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	63nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDB52N20TM FDB52N20TM FDB52N20TMTR ND FDB52N20TMTRND FDB52N20TMTR

FDB5645 Parameters

Technical/Catalog Information	FDB5645
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	9.5 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds	4468pF @ 30V
Power - Max	125W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	107nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDB5645 FDB5645

FDB5645 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

FDB5645 Maximum Ratings

Symbol	Parameter	FDP5645	FDB5645	Units
V_DSS	Drain-Source Voltage	60		V
V_GSS	Gate-Source Voltage	± 20		V
I_D	Drain Current - Continuous - Pulsed	80		A
		300
P_D	Total Power Dissipation @ TC =25 Derate above 25	125		W
		0.83		W/
T_J, T_stg	Operating and Storage Temperature Range	-65 to 175
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	+275

FDB5645 Features

· 80 A, 60 V. R _DS(ON)= 0.0095 W @ V_GS = 10 V
R _DS(ON)= 0.011 W @ V_GS = 6 V
· Critical DC electrical parameters specified at elevated temperature.
· Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
· High performance trench technology for extremely low R _DS(ON)
· 175°C maximum junction temperature rating.

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