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FDB603AL, FDB6060L, FDB60N03

Table of contents:
Info of FDB603AL
Info of FDB6060L
Info of FDB60N03

FDB603AL, FDB6060L, FDB60N03 Selling Leads, Datasheet

MFG:FAI Package Cooled:TO263 D/C:6

FDB603AL, FDB6060L, FDB60N03 Datasheet download

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Part Number: FDB603AL

MFG: FAI

Package Cooled: TO263

D/C: 6

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FDB603AL General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.

FDB603AL Maximum Ratings

Symbol	Parameter	FDP603AL	FDB603AL	Units
V_DSS	Drain-Source Voltage	30		V
V_GSS	Gate-Source Voltage - Continuous	±20		V
I_D	Drain Current - Continuous - Pulsed (Note 1)	33		A
		100
P_D	Total Power Dissipation @ T_C = 25	50		W
	Derate above 25	0.33		W/
T_J, T_STG	Operating and Storage Temperature Range	-65 to 175
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	275

FDB603AL Features

*33 A, 30 V. R_DS(ON) = 0.022 @ V_GS =10 V
R_DS(ON) = 0.036 @ V_GS =4.5 V.
*Critical DC electrical parameters specified at elevated temperature.
*Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
*High density cell design for extremely low R_DS(ON) .
*175°C maximum junction temperature rating.

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