MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+
FDD3690, FDD3690-NL, FDD3706 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: .
D/C: 06+
Description: MOSFET N-CH 20V 14.7A D-PAK
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PDF/DataSheet Download
Datasheet: FDD3690
File Size: 86030 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDD03-05D
File Size: 457928 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDD3706
File Size: 116245 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FDD3690 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 22A |
| Rds On (Max) @ Id, Vgs | 64 mOhm @ 5.4A, 10V |
| Input Capacitance (Ciss) @ Vds | 1514pF @ 50V |
| Power - Max | 1.6W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 39nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDD3690 FDD3690 |
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | 100 | V |
| VGSS | Gate-Source Voltage | ±20 | V |
| ID | Continuous Drain Current @TC=25°C (Note 3 Pulsed (Note 1a) |
22 | A |
| 75 | |||
| PD | Power Dissipation @TC=25°C (Note 3) @TA=25°C (Note 1a) @TA=25°C (Note 1b) |
60 | W |
| 3.8 | |||
| 1.6 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | 55 to +150 | °C |
| Technical/Catalog Information | FDD3706 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 14.7A |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 16.2A, 10V |
| Input Capacitance (Ciss) @ Vds | 1882pF @ 10V |
| Power - Max | 1.6W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 23nC @ 4.5V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDD3706 FDD3706 |
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | 20 | V |
| VGSS | Gate-Source Voltage | ±12 | V |
| ID | Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) Pulsed (Note 1a) |
50 | A |
| 14.7 | |||
| PD |
Power Dissipation @TC=25°C (Note 3) @TA=25°C (Note 1a) @TA=25°C (Note 1b) |
60 | W |
| 44 | |||
| 1.6 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | 55 to +150 | °C |
50 A, 20 V RDS(ON) = 9 m @ VGS = 10 V
RDS(ON) = 11 m @ VGS = 4.5 V
RDS(ON) = 16 m @ VGS = 2.5 V
Low gate charge (16 nC)
Fast Switching
High performance trench technology for extremely
low RDS(ON)
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