MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:. D/C:05+
FDD5612, FDD5614, FDD5614P Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor (VA)
Package Cooled: .
D/C: 05+
Description: MOSFET P-CHAN 60V PWR DPAK
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PDF/DataSheet Download
Datasheet: FDD5612
File Size: 151476 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDD5614
File Size: 83632 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDD5614P
File Size: 83632 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FDD5612 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 5.4A |
| Rds On (Max) @ Id, Vgs | 55 mOhm @ 5.4A, 10V |
| Input Capacitance (Ciss) @ Vds | 660pF @ 30V |
| Power - Max | 1.6W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 11nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDD5612 FDD5612 |
| Technical/Catalog Information | FDD5614P |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 15A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 4.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 759pF @ 30V |
| Power - Max | 1.6W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 24nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDD5614P FDD5614P FDD5614PCT ND FDD5614PCTND FDD5614PCT |
This 60V P-Channel MOSFET uses Fairchild's high voltage PowerTrench process. It has been optimized for power management applications.
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | 35 | V |
| VGSS | Gate-Source Voltage | ±20 | V |
| ID | Drain Current Continuous (Note 3) Pulsed (Note 1a) |
-15 | A |
| -45 | |||
| PD | Power Dissipation @TC=25°C (Note 3) @TA=25°C (Note 1a) @TA=25°C (Note 1b) |
42 | W |
| 3.8 | |||
| 1.6 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | 55 to +150 | °C |
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