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FDN339AN, FDN3401, FDN340P

Table of contents:
Info of FDN339AN
Info of FDN3401
Info of FDN340P

FDN339AN, FDN3401, FDN340P Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+

FDN339AN, FDN3401, FDN340P Datasheet download

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Part Number: FDN339AN

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: N/A

D/C: 09+

Description: MOSFET P-CHAN 20V 2A SSOT3

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FDN339AN Parameters

Technical/Catalog Information	FDN339AN
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	35 mOhm @ 3A, 4.5V
Input Capacitance (Ciss) @ Vds	700pF @ 10V
Power - Max	460mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	10nC @ 4.5V
Package / Case	SSOT-3
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDN339AN FDN339AN FDN339ANTR ND FDN339ANTRND FDN339ANTR

FDN339AN General Description

This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

FDN339AN Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	20	V
V_GSS	Gate-Source Voltage	±8	V
I_D	Drain Current - Continuous (Note 1a) - Pulsed	3	A
I_D	Drain Current - Continuous (Note 1a) - Pulsed	20	A
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b)	0.5	W
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b)	0.46	W
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150

FDN339AN Features

* 3 A, 20 V. R _DS(ON) = 0.035 @ V _GS = 4.5 V
R _DS(ON) = 0.050 @ V_GS = 2.5 V.
* Low gate charge (7nC typical).
* High performance trench technology for extremely low R _DS(ON)* High power and current handling capability.

FDN339AN Typical Application

* DC/DC converter
* Load switch

FDN340P Parameters

Technical/Catalog Information	FDN340P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	2A
Rds On (Max) @ Id, Vgs	70 mOhm @ 2A, 4.5V
Input Capacitance (Ciss) @ Vds	779pF @ 10V
Power - Max	460mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	10nC @ 4.5V
Package / Case	SSOT-3
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDN340P FDN340P FDN340PCT ND FDN340PCTND FDN340PCT

FDN340P General Description

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for portable electronics applications: Load switching and power management, battery charging circuits, and DC/DC conversion.

FDN340P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	-20	V
V_GSS	Gate-Source Voltage	±8	V
I_D	Drain Current - Continuous (Note 1a) - Pulsed	-2	A
I_D	Drain Current - Continuous (Note 1a) - Pulsed	-10	A
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b)	0.5	W
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b)	0.46	W
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150

FDN340P Features

2 A, 20 V. R _DS(ON) = 0.07 @ VGS = 4.5 V
R _DS(ON) = 0.11 @ VGS = 2.5 V.
R _DS(ON) = 0.210 @ VGS = 1.8 V.
Low gate charge (8nC typical).
High performance trench technology for extremely low _RDS(ON) .
High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30%higher power handling capability.

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