FDN302P

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 2.4 A
Package / Case : SuperSOT
Resistance Drain-Source RDS (on) : 0.055 Ohms


Features:

*  20 V,  2.4 A. R _DS(ON) = 0.055 @ V_GS = 4.5 V
                              R _DS(ON) = 0.080 @ V_GS = 2.5 V
*  Fast switching speed
*  High performance trench technology for extremely low R _DS(ON)
*  SuperSOT ^TM -3 provides low R _DS(ON)  and 30% higher power handling capability than SOT23 in the same footprint


Application

Power management
Load switch
Battery protection


Specifications

 

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current  - Continuous                 (Note 1a)  - Pulsed	-2.4	A
		-10
PD	Power Dissipation for Single Operation (Note 1a) (Note 1b)	0.5	W
		0.46
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150

Description

This FDN302P P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild's advanced PowerTrench process.  It has been optimized for power management applications with a wide range of gate drive voltage  (2.5V 12V).


Parameters:

Technical/Catalog Information	FDN302P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	2.4A
Rds On (Max) @ Id, Vgs	55 mOhm @ 2.4A, 4.5V
Input Capacitance (Ciss) @ Vds	882pF @ 10V
Power - Max	460mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	14nC @ 4.5V
Package / Case	SuperSOT?-3
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDN302P FDN302P FDN302PCT ND FDN302PCTND FDN302PCT