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FDN305, FDN306P, FDN308

Table of contents:
Info of FDN305
Info of FDN306P
Info of FDN308

FDN305, FDN306P, FDN308 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:QFP D/C:09+

FDN305, FDN306P, FDN308 Datasheet download

Five Points

Part Number: FDN306P

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: QFP

D/C: 09+

Description: MOSFET P-CHAN 12V 2.6A SSOT3

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FDN306P Parameters

Technical/Catalog Information	FDN306P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25° C	2.6A
Rds On (Max) @ Id, Vgs	40 mOhm @ 2.6A, 4.5V
Input Capacitance (Ciss) @ Vds	1138pF @ 6V
Power - Max	460mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17nC @ 4.5V
Package / Case	SSOT-3
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDN306P FDN306P FDN306PTR ND FDN306PTRND FDN306PTR

FDN306P General Description

This P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

FDN306P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	-12	V
V_GSS	Gate-Source Voltage	±8	V
I_D	Drain Current - Continuous (Note 1a) - Pulsed	-2.6	A
I_D	Drain Current - Continuous (Note 1a) - Pulsed	-10	A
P_D	Maximum Power Dissipation (Note 1a) (Note 1b)	0.5	W
P_D	Maximum Power Dissipation (Note 1a) (Note 1b)	0.46	W
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150

FDN306P Features

* 2.6 A, 12 V. R_DS(ON) = 40 m @ V_GS = 4.5 V
R _DS(ON) = 50 m @ V_GS = 2.5 V
R _DS(ON) = 80 m @ V_GS = 1.8 V
* Fast switching speed
* low R _DS(ON)
* SuperSOT^TM -3 provides low R _DS(ON) and 30% higher power handling capability than SOT23 in the same footprint

FDN306P Typical Application

* Battery management
* Load switch
* Battery protection

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