FDN327N

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 0.04 Ohms
Package / Case : SuperSOT


Features:

2 A, 20 V.  R _DS(ON) = 70 m @ V_GS = 4.5 V
                    R _DS(ON) = 80 m @ V_GS = 2.5 V
                    R _DS(ON) = 120m @ V_GS = 1.8 V
Low gate charge  (4.5 nC typical)
Fast switching speed
High performance trench technology for extremely low R _DS(ON)

 

Application

 Load switch 
 Battery protection
 Power management


Specifications

 

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±8	V
ID	Drain Current  - Continuous                   (Note 1a)   - Pulsed	2	A
		8
PD	Power Dissipation for Single Operation (Note 1a)   (Note 1b)	0.5	W
		0.46
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150

Description

This FDN327N 20V N-Channel MOSFET uses Fairchild's high voltage PowerTrench process. It has been optimized for power management applications.


Parameters:

Technical/Catalog Information	FDN327N
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	2A
Rds On (Max) @ Id, Vgs	70 mOhm @ 2A, 4.5V
Input Capacitance (Ciss) @ Vds	423pF @ 10V
Power - Max	460mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	6.3nC @ 4.5V
Package / Case	SuperSOT?-3
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDN327N FDN327N FDN327NDKR ND FDN327NDKRND FDN327NDKR