FDN327N

MOSFET N-Ch PowerTrench 1.8 VGS Spec

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SeekIC No. : 00147037 Detail

FDN327N: MOSFET N-Ch PowerTrench 1.8 VGS Spec

floor Price/Ceiling Price

US $ .12~.22 / Piece | Get Latest Price
Part Number:
FDN327N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Processing time
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Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 0.04 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SuperSOT Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 0.04 Ohms
Package / Case : SuperSOT


Features:

2 A, 20 V.  R DS(ON) = 70 m @ VGS = 4.5 V
                    R DS(ON) = 80 m @ VGS = 2.5 V
                    R DS(ON) = 120m @ VGS = 1.8 V
Low gate charge  (4.5 nC typical)
Fast switching speed
High performance trench technology for extremely low R DS(ON)

 




Application

 Load switch 
 Battery protection
 Power management



Specifications

 

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

20

V

VGSS

Gate-Source Voltage

±8

V

ID

Drain Current  - Continuous                   (Note 1a)
  - Pulsed

2

A

8

PD

Power Dissipation for Single Operation (Note 1a)
  (Note 1b)

0.5

W

0.46

TJ, Tstg

Operating and Storage Junction Temperature Range

-55 to +150




Description

This FDN327N 20V N-Channel MOSFET uses Fairchild's high voltage PowerTrench process. It has been optimized for power management applications.


Parameters:

Technical/Catalog InformationFDN327N
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C2A
Rds On (Max) @ Id, Vgs70 mOhm @ 2A, 4.5V
Input Capacitance (Ciss) @ Vds 423pF @ 10V
Power - Max460mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs6.3nC @ 4.5V
Package / CaseSuperSOT?-3
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDN327N
FDN327N
FDN327NDKR ND
FDN327NDKRND
FDN327NDKR



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