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FDP047AN, FDP047AN08, FDP047AN08A0

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Info of FDP047AN
Info of FDP047AN08
Info of FDP047AN08A0

FDP047AN, FDP047AN08, FDP047AN08A0 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:07+ D/C:TO-220

FDP047AN, FDP047AN08, FDP047AN08A0 Datasheet download

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Part Number: FDP047AN08A0

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: 07+

D/C: TO-220

Description: MOSFET N-CHAN 75V 80A TO-220AB

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FDP047AN08A0 Parameters

Technical/Catalog Information	FDP047AN08A0
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	4.7 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds	6600pF @ 25V
Power - Max	310W
Packaging	Tube
Gate Charge (Qg) @ Vgs	138nC @ 10V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP047AN08A0 FDP047AN08A0

FDP047AN08A0 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain to Source Voltage	75	V
V_GS	Gate to Source Voltage	±20	V
I_D	Drain Current	80	A
	Continuous (T_C < 144, V_GS= 10V)	80	A
	Continuous (T_C = 25, V_GS = 10V, with R_JA = 62 /W)	15	A
	Pulsed	Figure 4	A
E_AS	Single Pulse Avalanche Energy (Note 1)	475	mJ
P_D	Power dissipation	310	W
P_D	Derate above 25	2.0	W/
T_J, T_STG	Operating and Storage Temperature	-55to 175

FDP047AN08A0 Features

* r _DS(ON) = 4.0mW (Typ.), V_GS= 10V, ID = 80A
* Q_g (tot) = 92nC (Typ.), V_GS = 10V
* Low Miller Charge
* Low QRR Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101

FDP047AN08A0 Typical Application

* 42V Automotive Load Control
* Starter / Alternator Systems
* Electronic Power Steering Systems
* Electronic Valve Train Systems
* DC-DC converters and Off-line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 24V and 48V systems

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