FDP070AN06A0

MOSFET N-Channel PwrTrench

product image

FDP070AN06A0 Picture
SeekIC No. : 00156615 Detail

FDP070AN06A0: MOSFET N-Channel PwrTrench

floor Price/Ceiling Price

US $ .65~1.01 / Piece | Get Latest Price
Part Number:
FDP070AN06A0
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~180
  • 180~250
  • 250~500
  • 500~1000
  • Unit Price
  • $1.01
  • $.89
  • $.79
  • $.65
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/18

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.007 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 15 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.007 Ohms


Features:

*rDS(ON)  = 6.1m  (Typ.), VGS = 10V, ID= 80A 
*Qg (tot) = 51nC (Typ.), VGS = 10V
* Low Miller Charge
*Low QRR Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101
Formerly developmental type 82567



Application

* Motor / Body Load Control
* ABS Systems
* Powertrain Management
* Injection Systems
* DC-DC converters and Off-line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 12V and 24V systems



Specifications

Symbol Parameter Ratings Units
VDSS
Drain to Source Voltage 60
V

VGS
Gate to Source Voltage ±20 V
ID
Drain Current
Continuous (TC < 97, VGS = 10V)
80 A
Continuous (TA  = 25, VGS = 10V, RJA = 43/W) 15 A
Pulsed Figure 4 A
EAS
Single Pulse Avalanche Energy (Note 1) 190 mJ
PD
Power dissipation 175 W
Derate above 25 1.17 W/
TJ  , TSTG Operating and Storage Temperature -55 to 175



Parameters:

Technical/Catalog InformationFDP070AN06A0
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs7 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 3000pF @ 25V
Power - Max175W
PackagingTube
Gate Charge (Qg) @ Vgs66nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDP070AN06A0
FDP070AN06A0



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Hardware, Fasteners, Accessories
Circuit Protection
Optoelectronics
Cable Assemblies
Cables, Wires
View more