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FDP070AN06A0

MOSFET N-Channel PwrTrench

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SeekIC No. : 00156615 Detail

FDP070AN06A0: MOSFET N-Channel PwrTrench

FDP070AN06A0 Data Sheet

floor Price/Ceiling Price

US $ .65~1.01 / Piece | Get Latest Price
Part Number:
FDP070AN06A0
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~180
  • 180~250
  • 250~500
  • 500~1000
  • Unit Price
  • $1.01
  • $.89
  • $.79
  • $.65
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.007 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 15 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.007 Ohms


Features:

*rDS(ON)  = 6.1m  (Typ.), VGS = 10V, ID= 80A 
*Qg (tot) = 51nC (Typ.), VGS = 10V
* Low Miller Charge
*Low QRR Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101
Formerly developmental type 82567


Application

* Motor / Body Load Control
* ABS Systems
* Powertrain Management
* Injection Systems
* DC-DC converters and Off-line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 12V and 24V systems


Specifications

Symbol Parameter Ratings Units
VDSS
 Drain to Source Voltage 60
 V

VGS		 Gate to Source Voltage ±20 V
ID
 Drain Current
Continuous (TC < 97, VGS = 10V) 		80 A
Continuous (TA  = 25, VGS = 10V, RJA = 43/W) 15 A
Pulsed Figure 4 A
EAS
 Single Pulse Avalanche Energy (Note 1) 190 mJ
PD
 Power dissipation 175 W
Derate above 25 1.17 W/
TJ  , TSTG Operating and Storage Temperature -55 to 175



Parameters:

Technical/Catalog InformationFDP070AN06A0
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs7 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 3000pF @ 25V
Power - Max175W
PackagingTube
Gate Charge (Qg) @ Vgs66nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDP070AN06A0
FDP070AN06A0



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