MOSFET N-Channel PwrTrench
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 15 A | ||
Resistance Drain-Source RDS (on) : | 0.007 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Symbol | Parameter | Ratings | Units |
VDSS |
Drain to Source Voltage | 60 |
V |
VGS |
Gate to Source Voltage | ±20 | V |
ID |
Drain Current Continuous (TC < 97, VGS = 10V) |
80 | A |
Continuous (TA = 25, VGS = 10V, RJA = 43/W) | 15 | A | |
Pulsed | Figure 4 | A | |
EAS |
Single Pulse Avalanche Energy (Note 1) | 190 | mJ |
PD |
Power dissipation | 175 | W |
Derate above 25 | 1.17 | W/ | |
TJ , TSTG | Operating and Storage Temperature | -55 to 175 |
Technical/Catalog Information | FDP070AN06A0 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 80A |
Rds On (Max) @ Id, Vgs | 7 mOhm @ 80A, 10V |
Input Capacitance (Ciss) @ Vds | 3000pF @ 25V |
Power - Max | 175W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 66nC @ 10V |
Package / Case | TO-220AB |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDP070AN06A0 FDP070AN06A0 |