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FDP20N40, FDP20N50, FDP24AN06LA0

Table of contents:
Info of FDP20N40
Info of FDP20N50
Info of FDP24AN06LA0

FDP20N40, FDP20N50, FDP24AN06LA0 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+

FDP20N40, FDP20N50, FDP24AN06LA0 Datasheet download

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Part Number: FDP20N50

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 09+

Description: MOSFET N-CH 60V 40A TO-220AB

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FDP20N40 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSSV_GSS	Drain-Source Voltage Gate-Source Voltage	400 ±30 20 14 80 273 1.82 -55 to 175 300 (1.6mm from case) 10ibfin (1.1Nm)	V V A A A W W/
I_D	Drain Current Continuous (TC = 25, VGS = 10V) Continuous (TC = 100, VGS = 10V) Pulsed (Note 1)
P_D	Power dissipation Derate above 25
T_J, T_STG	Operating and Storage Temperature Soldering Temperature for 10 seconds Mounting Torque, 8-32 or M3 Screw

FDP20N40 Features

• Low Gate Charge Qg results in Simple Drive Requirement
• Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness
• Reduced rDS(ON)
• Reduced Miller Capacitance and Low Input Capacitance
• Improved Switching Speed with Low EMI
• 175°C Rated Junction Temperature

FDP20N40 Typical Application

• PFC Boost
• Two-Switch Forward Converter
• Single Switch Forward Converter
• Flyback Converter
• Buck Converter
• High Speed Switching

FDP20N50 Parameters

Technical/Catalog Information	FDP20N50
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	230 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	3120pF @ 25V
Power - Max	250W
Packaging	Tube
Gate Charge (Qg) @ Vgs	59.5nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP20N50 FDP20N50

FDP24AN06LA0 Parameters

Technical/Catalog Information	FDP24AN06LA0
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	40A
Rds On (Max) @ Id, Vgs	19 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds	1850pF @ 25V
Power - Max	75W
Packaging	Tube
Gate Charge (Qg) @ Vgs	21nC @ 5V
Package / Case	TO-220AB
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP24AN06LA0 FDP24AN06LA0

FDP24AN06LA0 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain to Source Voltage	60	V
V_GS	Gate to Source Voltage	±20	V
I_D	Drain Current Continuous (T_C = 25, V_GS = 10V)	40	A
	Continuous (T_C = 25, V_GS = 5V)	36	A
	Continuous (T_C = 100, V_GS = 5V)	25	A
	Continuous (T_A = 25, V_GS = 5V, R_JA = 43/W)	7.8	A
	Pulsed	Figure 4	A
E_AS	Single Pulse Avalanche Energy (Note 1)	36	mJ
P_D	Power dissipation	75	W
P_D	Derate above 25	0.5	W/
T_J , T_STG	Operating and Storage Temperature	-55 to 175

FDP24AN06LA0 Features

*r_DS(ON) = 20m (Typ.), V_GS = 5V, I_D= 36A
*Q_g (tot) = 16nC (Typ.), V_GS = 5V
* Low Miller Charge
*Low Q_RR Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101
Formerly developmental type 83547

FDP24AN06LA0 Typical Application

* Motor / Body Load Control
* ABS Systems
* Powertrain Management
* Injection Systems
* DC-DC converters and Off-line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 12V and 24V systems

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