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FDP2570, FDP2572, FDP2670

Table of contents:
Info of FDP2570
Info of FDP2572
Info of FDP2670

FDP2570, FDP2572, FDP2670 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:09+

FDP2570, FDP2572, FDP2670 Datasheet download

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Part Number: FDP2570

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: 09+

Description: MOSFET N-CH 200V 19A TO-220AB

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FDP2570 Parameters

Technical/Catalog Information	FDP2570
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	22A
Rds On (Max) @ Id, Vgs	80 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds	1911pF @ 75V
Power - Max	93W
Packaging	Tube
Gate Charge (Qg) @ Vgs	56nC @ 10V
Package / Case	TO-220AB
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP2570 FDP2570

FDP2570 General Description

This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS_(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

FDP2570 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	150	V
V_GSS	Gate-Source Voltage	± 20	V
I_D	Drain Current Continuous (Note 1) Pulsed (Note 1)	22	A A
I_D	Drain Current Continuous (Note 1) Pulsed (Note 1)	50	A A
P_D	Total Power Dissipation @ T_C = 25 Derate above 25	93	W
P_D	Total Power Dissipation @ T_C = 25 Derate above 25	0.63	W°/C
T_J, T_STG	Operating and Storage Junction Temperature Range	65 to +175

FDP2570 Features

* 22 A, 150 V. R_DS(ON) = 80 m @ V_GS = 10 V
R_DS(ON) = 90 m @ V_GS = 6 V
* Low gate charge (40nC typical)
* Fast switching speed
* High performance trench technology for extremely low RDS(ON)
* 175°C maximum junction temperature rating

FDP2572 Parameters

Technical/Catalog Information	FDP2572
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	29A
Rds On (Max) @ Id, Vgs	54 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds	1770pF @ 25V
Power - Max	135W
Packaging	Tube
Gate Charge (Qg) @ Vgs	34nC @ 10V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP2572 FDP2572

FDP2572 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	150	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Drain Current Continuous (T_C = 25, V_GS = 10V)	29	A
	Continuous (T_C = 100, V_GS = 10V)	20	A
	Continuous (T_amb = 25, V_GS = 10V, R_JA = 43/W)	4	A
	Pulsed	Figure 4	A
E_AS	Single Pulse Avalanche Energy (Note 1)	36	mJ
P_D	Power dissipation	135	W
P_D	Derate above 25	0.9	W/°C
T_J, T_stg	Operating and Storage Temperature	-55 to +175	°C

FDP2572 Features

• r_DS(ON)= 45mΩ (Typ.), V_GS = 10V, I_D = 9A
• Q_g(tot) = 26nC (Typ.), V_GS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101

FDP2572 Typical Application

• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems

FDP2670 Parameters

Technical/Catalog Information	FDP2670
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	19A
Rds On (Max) @ Id, Vgs	130 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	1320pF @ 100V
Power - Max	93W
Packaging	Tube
Gate Charge (Qg) @ Vgs	38nC @ 10V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP2670 FDP2670

FDP2670 General Description

This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and fast switching will benefit.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

FDP2670 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	200	V
V_GSS	Gate-Source Voltage	± 20	V
I_D	Drain Current Continuous (Note 1) Pulsed (Note 1)	19	A A
I_D	Drain Current Continuous (Note 1) Pulsed (Note 1)	40	A A
P_D	Total Power Dissipation @ T_C = 25 Derate above 25	93	W
P_D	Total Power Dissipation @ T_C = 25 Derate above 25	0.63	W°/C
dv/dt	Peak Diode Recovery dv/dt (Note 3)	3.2	V/ns
T_J, T_STG	Operating and Storage Junction Temperature Range	65 to +175

FDP2670 Features

* 19 A, 200 V. R_DS(ON) = 130 m @ V_GS = 10 V
* Low gate charge (27 nC typical)
* Fast switching speed
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability

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