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FDP5690, FDP5800, FDP6021P

Table of contents:
Info of FDP5690
Info of FDP5800
Info of FDP6021P

FDP5690, FDP5800, FDP6021P Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:09+

FDP5690, FDP5800, FDP6021P Datasheet download

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Part Number: FDP5690

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: 09+

Description: MOSFET N-CH 60V 14A TO-220

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FDP5690 Parameters

Technical/Catalog Information	FDP5690
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	32A
Rds On (Max) @ Id, Vgs	27 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	1120pF @ 25V
Power - Max	58W
Packaging	Tube
Gate Charge (Qg) @ Vgs	33nC @ 10V
Package / Case	TO-220
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP5690 FDP5690

FDP5690 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.

FDP5690 Maximum Ratings

Symbol	Parameter	FDP5690	FDB5690	Units
V_DSS	Drain-Source Voltage	80		V
V_GSS	Gate-Source Voltage	± 20		V
I_D	Drain Current - Continuous - Pulsed	32		A
		100
P_D	Total Power Dissipation @ TC = 25	58		W
	Derate above 25	0.4		W/°C
T_J, T_stg	Operating and Storage Temperature Range	-65 to +175		°C

FDP5690 Features

• 32 A, 60 V.  R _DS(ON)= 0.027 Ω @ VGS = 10 V
                      R _DS(ON)= 0.032 Ω @ VGS = 6 V
• Critical DC electrical parameters specified at evevated temperature.
• Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
• High performance trench technology for extremely low  R _DS(ON)• 175°C maximum junction temperature rating.

FDP5800 Parameters

Technical/Catalog Information	FDP5800
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	14A
Rds On (Max) @ Id, Vgs	6 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds	9160pF @ 15V
Power - Max	242W
Packaging	Tube
Gate Charge (Qg) @ Vgs	145nC @ 10V
Package / Case	TO-220
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP5800 FDP5800

FDP6021P General Description

This P-Channel power MOSFET uses Fairchild's low voltage PowerTrench process. It has been optimized for power management applications.

FDP6021P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	20	V
V_GSS	Gate-Source Voltage	± 8	V
I_D	Drain Current Continuous (Note 1) Pulsed (Note 1)	28	A
I_D	Drain Current Continuous (Note 1) Pulsed (Note 1)	80	A
P_D	Total Power Dissipation @ T_C= 25 Derate above 25	37	W
P_D	Total Power Dissipation @ T_C= 25 Derate above 25	0.25	W°C
T_J, T_STG	Operating and Storage Junction Temperature Range	65 to +175	°C

FDP6021P Features

* 28 A, 20 V. R_DS(ON) = 30 m @ V_GS = 4.5 V
R_DS(ON) = 40 m @ V_GS = 2.5 V
R_DS(ON) = 65 m @ V_GS = 1.8 V
* Critical DC electrical parameters specified at elevated temperature
* High performance trench technology for extremely low RDS(ON)
* 175°C maximum junction temperature rating

FDP6021P Typical Application

* Battery management
* Load switch
* Voltage regulator

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