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FDP603AL, FDP61N20, FDP65N06

Table of contents:
Info of FDP603AL
Info of FDP61N20
Info of FDP65N06

FDP603AL, FDP61N20, FDP65N06 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:175

FDP603AL, FDP61N20, FDP65N06 Datasheet download

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Part Number: FDP61N20

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: 175

Description: IC MOSFET N-CH 60V 65A TO-220

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FDP603AL General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.

FDP603AL Maximum Ratings

Symbol	Parameter	FDP603AL	FDB603AL	Units
V_DSS	Drain-Source Voltage	30		V
V_GSS	Gate-Source Voltage - Continuous	±20		V
I_D	Drain Current - Continuous - Pulsed (Note 1)	33		A
		100
P_D	Total Power Dissipation @ T_C = 25	50		W
	Derate above 25	0.33		W/
T_J, T_STG	Operating and Storage Temperature Range	-65 to 175
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	275

FDP603AL Features

*33 A, 30 V. R_DS(ON) = 0.022 @ V_GS =10 V
R_DS(ON) = 0.036 @ V_GS =4.5 V.
*Critical DC electrical parameters specified at elevated temperature.
*Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
*High density cell design for extremely low R_DS(ON) .
*175°C maximum junction temperature rating.

FDP61N20 Parameters

Technical/Catalog Information	FDP61N20
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	61A
Rds On (Max) @ Id, Vgs	41 mOhm @ 30.5A, 10V
Input Capacitance (Ciss) @ Vds	3380pF @ 25V
Power - Max	417W
Packaging	Tube
Gate Charge (Qg) @ Vgs	75nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP61N20 FDP61N20

FDP61N20 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe,DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

FDP61N20 Maximum Ratings

Symbol	Parameter	FDP61N20	Unit
V_DSS	Drain-Source Voltage	200	V
I_D	Drain Current - Continuous (T_C = 25) - Continuous (T_C = 100)	61 38.5	A A
I_DM	Drain Current Pulsed (Note 1)	244	A
V_GSS	Gate-Source voltage	±30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	1440	mJ
I_AR	I Avalanche Current (Note 1)	61	A
E_AR	Repetitive Avalanche Energy (Note 1)	41.7	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	417 3.3	W W/
T_J,T_STG	Operating and Storage Temperature Range	-55to+150
T_L	Maximum Lead Temperature for Soldering Purpose,1/8" from Case for 5 Seconds	300

FDP61N20 Features

* 61A, 200V, R _DS(on) = 0.041W @V_GS = 10 V
* Low gate charge ( typical 58 nC)
* Low C_rss ( typical 80 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FDP65N06 Parameters

Technical/Catalog Information	FDP65N06
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	65A
Rds On (Max) @ Id, Vgs	16 mOhm @ 32.5A, 10V
Input Capacitance (Ciss) @ Vds	2170pF @ 25V
Power - Max	135W
Packaging	Tube
Gate Charge (Qg) @ Vgs	43nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP65N06 FDP65N06

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