FDP6690S, FDP7024, FDP70301_88RF002A Selling Leads, Datasheet
Package Cooled:TO-220 D/C:09+
FDP6690S, FDP7024, FDP70301_88RF002A Datasheet download
Part Number: FDP6690S
MFG: --
Package Cooled: TO-220
D/C: 09+
FDP6690S, FDP7024, FDP70301_88RF002A
- Table of contents:
Info of FDP6690S
Info of FDP7024
Info of FDP70301_88RF002A
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About FDP6690S
PDF/DataSheet Download
Datasheet: FDP6690S
File Size: 90584 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FDP038AN06A0
PDF/DataSheet Download
Datasheet: FDP038AN06A0
File Size: 287554 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FDP038AN06A0
PDF/DataSheet Download
Datasheet: FDP038AN06A0
File Size: 287554 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FDP6690S General Description
This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6690S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDP6690S/FDB6690S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6035AL/FDB6035AL in parallel with a Schottky diode.
FDP6690S Maximum Ratings
|
Symbol |
Parameter |
FDP6690S |
FDB6690S |
Units |
|
VDSS |
Drain-Source Voltage |
30 |
V | |
|
VGSS |
Gate-Source Voltage |
± 20 |
V | |
|
ID |
Drain Current - Continuous
- Pulsed |
42 |
A | |
|
140 | ||||
|
PD |
Total Power Dissipation @ TC=25
Derate above 25 |
48 |
W | |
|
0.5 |
W/ | |||
|
TJ, Tstg |
Operating and Storage Temperature Range |
55 to +150 |
||
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
||
FDP6690S Features
· 21 A, 30 V. R DS(ON)= 15.5 mW @ VGS = 10 V
R DS(ON)= 23.0 mW @ VGS = 4.5 V
· Includes SyncFET Schottky body diode
· Low gate charge (11nC typical)
· High performance trench technology for extremely low R DS(ON) and fast switching
· High power and current handling capability
R DS(ON)= 23.0 mW @ VGS = 4.5 V
· Includes SyncFET Schottky body diode
· Low gate charge (11nC typical)
· High performance trench technology for extremely low R DS(ON) and fast switching
· High power and current handling capability
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