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This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low R DS(ON) and low gate charge. The FDP7030BLS includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDP7030BLS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP7030BL in parallel with a Schottky diode.
FDP7030BLS Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current Continuous (Note 1) Pulsed (Note 1)
56
A
160
PD
Total Power Dissipation @ TC = 25°C Derate above 25°C
65
W
0.43
W/°C
TJ, TSTG
Operating and Storage Junction Temperature Range
65 to +100
°C
TL
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
275
°C
FDP7030BLS Features
· 56 A, 30 V. R DS(ON) = 10.5 mW @ VGS = 10 V R DS(ON) = 16.5 mW @ VGS = 4.5 V · Includes SyncFET Schottky body diode · Low gate charge (15nC typical) · High performance trench technology for extremely low R DS(ON) and fast switching · High power and current handling capability
FDP7030L Parameters
Technical/Catalog Information
FDP7030L
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25° C
80A
Rds On (Max) @ Id, Vgs
7 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds
2440pF @ 15V
Power - Max
68W
Packaging
Tube
Gate Charge (Qg) @ Vgs
33nC @ 5V
Package / Case
TO-220
FET Feature
Logic Level Gate
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FDP7030L FDP7030L
FDP7030L General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
FDP7030L Maximum Ratings
Symbol
Parameter
FDP7030L
FDB7030L
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage - Continuous
±20
V
ID
Drain Current - Continuous (Note 1)
- Pulsed (Note 1)
100
A
75
300
PD
Total Power Dissipation @ TC = 25
125
W
Derate above 25
0.83
W/
TJ ,TSTG
Operating and Storage Temperature Range
-65 to 175
TL
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
275
FDP7030L Features
*100 A, 30 V. RDS(ON) = 0.007 @ VGS=10 V RDS(ON) = 0.010 @ VGS =5 V. *Critical DC electrical parameters specified at elevated temperature. *Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. *High density cell design for extremely low RDS(ON) . *175°C maximum junction temperature rating.
FDP7042L General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for"low side" synchronous rectifier operation, providing an extremely low RDS(ON) .
FDP7042L Maximum Ratings
Symbol
Parameter
FDP6030BL
FDB6030BL
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current Continuous (Note 1) Pulsed (Note 1)
50
A
150
PD
Total Power Dissipation @ TC = 25 Derate above 25
83
W
0.48
W/
TJ, TSTG
Operating and Storage Junction Temperature Range
-65 to +175
FDP7042L Features
*50 A, 30 V. RDS(ON) = 9 m @ VGS = 4.5 V RDS(ON) = 7.5 m @ VGS = 10 V *Critical DC electrical parameters specified at elevated temperature *High performance trench technology for extremely low RDS(ON) *175 maximum junction temperature rating