MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:06+
FDP7045, FDP7045L, FDP75N08 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-220
D/C: 06+
Description: MOSFET N-CH 75V TO-220
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PDF/DataSheet Download
Datasheet: FDP7045
File Size: 439025 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDP7045L
File Size: 439025 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDP75N08
File Size: 730140 KB
Manufacturer:
Download : Click here to Download
| Technical/Catalog Information | FDP75N08 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Rds On (Max) @ Id, Vgs | 11 mOhm @ 37.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 4468pF @ 25V |
| Power - Max | 137W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 104nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDP75N08 FDP75N08 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology
|
Parameter |
Symbol |
Limit |
Unit | |
| Drain-source voltage |
VDSS |
75 |
V | |
| Gate-source voltage |
VGSS |
75 | ||
| Drain current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
ID |
75 |
A | |
|
47.7 | ||||
| Drain Current - Pulsed (Note 1) |
IDM |
±20 | ||
| Drain power dissipation Tc = 25°C | Power Dissipation (TC = 25°C) |
PD |
131 |
W |
| - Derate above 25°C |
1 |
W/°C | ||
| Single pulse avalanche energy (Note 2) |
EAS |
1164 |
mJ | |
| Avalanche current(Note 1) |
IAR |
75 |
A | |
| Repetitive avalanche energy (Note 1) |
EAR |
13.1 |
mJ | |
| Peak Diode Recovery dv/dt (Note 3) |
dv/dt |
4.5 |
V/ns | |
| Operating temperature |
Tj |
-55~150 |
°C | |
| Storage temperature range |
Tstg |
-55~150 |
°C | |
| Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds |
TL |
300 |
°C | |
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