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FDP8878, FDP8880, FDP8896

FDP8878, FDP8880, FDP8896 Selling Leads, Datasheet

MFG:Fairchild Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:TO-220  D/C:TO

FDP8878 Picture

FDP8878, FDP8880, FDP8896 Datasheet download

Five Points

Part Number: FDP8878

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: TO

Description: MOSFET N-CH 30V 92A TO-220AB

Price Break

1
10
100
250
500
1000
5000

Unit Price

.88000
.66000
.49500
.36520
.30800
.29260
.28050

Extended Price

0.88
6.60
49.50
91.30
154.00
292.60
1402.50

(All prices are in USD) Prices for reference only
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  • FDP030N06

  • Vendor: FSC Pack: Original D/C: 12+& Qty: 1000000  Adddate: 2024-05-04
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  • TODENKI ELECTRONICS COMPANY   China
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  • FDP032N08

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  • FDP032N08

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    Contact: Mr.zhang   MSN:zhangwm1986@hotmail.com
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    (1)

About FDP038AN06A0

PDF/DataSheet Download

Datasheet: FDP038AN06A0

File Size: 287554 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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  • FDP8880

  • Vendor: FSC Pack: Original D/C: 12+& Qty: 400000  Adddate: 2024-05-04
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  • TODENKI ELECTRONICS COMPANY   China
    Contact: Ms.Alice  
    Tel: 86-755-82565937
    Fax: 86-755-83206987
    (14)
  • FDP030N06

  • Vendor: FSC Pack: Original D/C: 12+& Qty: 1000000  Adddate: 2024-05-04
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  • TODENKI ELECTRONICS COMPANY   China
    Contact: Ms.Alice  
    Tel: 86-755-82565937
    Fax: 86-755-83206987
    (14)
  • FDP032N08

  • Vendor: FSC Pack: Original D/C: 12+& Qty: 50000  Adddate: 2024-05-04
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  • TODENKI ELECTRONICS COMPANY   China
    Contact: Ms.Alice  
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    Fax: 86-755-83206987
    (14)
  • FDP032N08

  • Vendor: Fairchild Qty: 1235  Adddate: 2024-05-04
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  • weiming   China
    Contact: Mr.zhang   MSN:zhangwm1986@hotmail.com
    Tel: 0086-0755-82766465
    Fax: 0086-0755-82766465
    (1)

About FDP8880

PDF/DataSheet Download

Datasheet: FDP8880

File Size: 237421 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FDP8896 Suppliers

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  • FDP8896

  • Vendor: FSC Pack: Original D/C: 12+& Qty: 50000  Adddate: 2024-05-04
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  • TODENKI ELECTRONICS COMPANY   China
    Contact: Ms.Alice  
    Tel: 86-755-82565937
    Fax: 86-755-83206987
    (14)
  • FDP030N06

  • Vendor: FSC Pack: Original D/C: 12+& Qty: 1000000  Adddate: 2024-05-04
  • Inquire Now
  • TODENKI ELECTRONICS COMPANY   China
    Contact: Ms.Alice  
    Tel: 86-755-82565937
    Fax: 86-755-83206987
    (14)
  • FDP032N08

  • Vendor: FSC Pack: Original D/C: 12+& Qty: 50000  Adddate: 2024-05-04
  • Inquire Now
  • TODENKI ELECTRONICS COMPANY   China
    Contact: Ms.Alice  
    Tel: 86-755-82565937
    Fax: 86-755-83206987
    (14)
  • FDP032N08

  • Vendor: Fairchild Qty: 1235  Adddate: 2024-05-04
  • Inquire Now
  • weiming   China
    Contact: Mr.zhang   MSN:zhangwm1986@hotmail.com
    Tel: 0086-0755-82766465
    Fax: 0086-0755-82766465
    (1)

About FDP8896

PDF/DataSheet Download

Datasheet: FDP8896

File Size: 272778 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FDP8878 Parameters

Technical/Catalog InformationFDP8878
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C40A
Rds On (Max) @ Id, Vgs15 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 1235pF @ 15V
Power - Max40.5W
PackagingTube
Gate Charge (Qg) @ Vgs23nC @ 10V
Package / CaseTO-220AB
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDP8878
FDP8878

FDP8880 Parameters

Technical/Catalog InformationFDP8880
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C54A
Rds On (Max) @ Id, Vgs11.6 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 1240pF @ 15V
Power - Max55W
PackagingTube
Gate Charge (Qg) @ Vgs29nC @ 10V
Package / CaseTO-220AB
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDP8880
FDP8880

FDP8880 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.  It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

FDP8880 Maximum Ratings

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
Continuous (TC = 25, VGS = 10V)
        54
A
Continuous (TC = 100, VGS = 10V)
48
A
Continuous (Tamb = 25, VGS = 10V, RJA = 43/W)
11
A
Pulsed
Figure 4
A
EAS
Single Pulse Avalanche Energy (Note 1)
31
mJ
PD
Power dissipation
55
W
Derate above 25
0.37
W/°C
TJ, Tstg
Operating and Storage Temperature
-55 to 175
°C

FDP8880 Features

rDS(ON)= 14.5mΩ , VGS= 4.5V, ID =40A
rDS(ON)= 11.6mΩ , VGS= 10V, ID = 40A
High performance trench technology for extremely low rDS(ON)
Low gate charge
High power and current handling capability

FDP8880 Typical Application

 DC/DC converters

FDP8896 Parameters

Technical/Catalog InformationFDP8896
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C92A
Rds On (Max) @ Id, Vgs5.9 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds 2525pF @ 15V
Power - Max80W
PackagingTube
Gate Charge (Qg) @ Vgs67nC @ 10V
Package / CaseTO-220AB
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDP8896
FDP8896

FDP8896 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

FDP8896 Maximum Ratings

Symbol
Parameter
Ratings
Units
VDSS Drain to Source Voltage
30
V
VGS Gate to Source Voltage
±20
V
ID Drain Current
Continuous (TC=25, VGS = 10V)
92
A
Continuous (TC =25, VGS =4.5V)
985
A
Continuous (Tamb = 25, VGS = 10V, RJA = 62/W)
16
A
Pulsed
Figure 4
A
EAS Single Pulse Avalanche Energy (Note 1)
74
mJ
PD Power dissipation
80
W
Derate above 25
0.53
W/
TJ, TSTG Operating and Storage Temperature
-55 to 175

FDP8896 Features

• rDS(ON) = 5.9mΩ, VGS = 10V, ID = 35A
• rDS(ON) = 7.0mΩ, VGS = 4.5V, ID = 35A
• High performance trench technology for extremely low rDS(ON)
• Low gate charge
• High power and current handling capability

FDP8896 Typical Application

• DC/DC converters

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