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The FDQ7238AS is designed to replace two single SO- 8 MOSFETs in DC to DC power supplies. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using Fairchild's SyncFET TM technology. The FDQ7238AS includes a patented combination of a MOSFET monolithically integrated with a Schottky diode.
FDQ7238AS Maximum Ratings
Symbol
Parameter
Q2
Q1
Units
VDSS
Drain-Source Voltage
30
30
V
VGSS
Gate-Source Voltage
±20
±20
V
ID
Drain Current Continuous (Note 1a) Pulsed
14
11
A
50
50
PD
Power Dissipation for Single Operation (Note 1a & 1b) (Note 1c & 1d)
2.4
1.8
W
1.3
1.1
TJ,TSTG
Operating and Storage Junction Temperature Range
55to+150
°C
FDQ7238AS Features
• Q2: 14 A, 30V. RDS(on) = 8.7 m @ VGS = 10V RDS(on) = 10.5 m @ VGS = 4.5V • Q1: 11 A, 30V. RDS(on) = 13.2 m @ VGS = 10V RDS(on) = 16 m @ VGS = 4.5V
FDQ7238AS Connection Diagram
FDQ7238S General Description
The FDQ7238S is designed to replace two single SO-8 MOSFETs in DC to DC power supplies. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using Fairchild's SyncFET TM technology.
FDQ7238S Maximum Ratings
Symbol
Parameter
Q2
Q1
Units
VDSS
Drain-Source Voltage
30
30
V
VGSS
Gate-Source Voltage
±16
±16
V
ID
Drain Current Continuous (Note 1a) Pulsed
14
11
A
50
50
PD
Power Dissipation for Single Operation (Note 1a & 1b) (Note 1c & 1d)