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FDS6675S, FDS6676, FDS6676AS

Table of contents:
Info of FDS6675S
Info of FDS6676
Info of FDS6676AS

FDS6675S, FDS6676, FDS6676AS Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOP8P D/C:09+

FDS6675S, FDS6676, FDS6676AS Datasheet download

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Part Number: FDS6675S

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: SOP8P

D/C: 09+

Description: MOSFET N-CH 30V 8-SOIC

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FDS6676 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R_DS(ON) and fast switching speed.

FDS6676 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	30	V
V_GSS	Gate-Source Voltage	±16	V
I_D	Drain Current Continuous (Note 1a) Pulsed	14.5	A
I_D	Drain Current Continuous (Note 1a) Pulsed	50	A
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	2.5	W
		1.2
		1.0
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +175	°C

FDS6676 Features

· 14.5 A, 30 V. R_DS(ON) = 7 mW @ V_GS = 10 V
R_DS(ON) = 8 mW @ V_GS = 4.5 V
· High performance trench technology for extremely low R_DS(ON)
· Low gate charge (45 nC typ)
· High power and current handling capability

FDS6676 Typical Application

· DC/DC converter

FDS6676 Connection Diagram

FDS6676AS Parameters

Technical/Catalog Information	FDS6676AS
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	14.5A
Rds On (Max) @ Id, Vgs	6 mOhm @ 14.5A, 10V
Input Capacitance (Ciss) @ Vds	2510pF @ 15V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	63nC @ 10V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6676AS FDS6676AS

FDS6676AS General Description

The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low R_DS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.

FDS6676AS Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	30	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Drain Current Continuous (Note 1a) Pulsed	14.5	A
I_D	Drain Current Continuous (Note 1a) Pulsed	50	A
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	2.5	W
		1.2
		1.0
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +150	°C

FDS6676AS Features

14.5 A, 30 V. R_DS(ON)max= 6.0 mΩ@ V_GS= 10 V
R_DS(ON)max= 7.25 mΩ@ V_GS= 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (45nC typical)
High performance trench technology for extremely low R_DS(ON) and fast switching
High power and current handling capability

FDS6676AS Typical Application

DC/DC converter
Low side notebook

FDS6676AS Connection Diagram

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