FDS2070N3

MOSFET 150V NCh PowerTrench

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FDS2070N3 Picture
SeekIC No. : 00163251 Detail

FDS2070N3: MOSFET 150V NCh PowerTrench

floor Price/Ceiling Price

Part Number:
FDS2070N3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4.1 A
Resistance Drain-Source RDS (on) : 0.078 Ohms Configuration : Single Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 150 V
Package / Case : SOIC-8
Configuration : Single Triple Source
Resistance Drain-Source RDS (on) : 0.078 Ohms
Continuous Drain Current : 4.1 A


Features:

• 4.1 A, 150 V. RDS(ON) = 78 m @ VGS = 10 V
                        RDS(ON) = 88 m @ VGS = 6.0 V
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
• Fast switching, low gate charge (38nC typical)
• FLMP SO-8 package: Enhanced thermal performance in industry-standard package size



Application

• Synchronous rectifier
• DC/DC converter



Pinout

  Connection Diagram


Specifications

Symbol Parameter
Ratings
Units
VDSS Drain-Source Voltage
150
V
VGSS Gate-Source Voltage
± 20
ID

Drain Current Continuous (Note 1a)
              Pulsed
4.1
A
30
PD

Power Dissipation for Single Operation (Note 1a)
                                     (Note 1b)
3.0
W
1.8
TJ, TSTG Operating and Storage Junction Temperature Range
55 to +150
°C



Description

This FDS2070N3 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. FDS2070N3 has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.


Parameters:

Technical/Catalog InformationFDS2070N3
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C4.1A
Rds On (Max) @ Id, Vgs78 mOhm @ 4.1A, 10V
Input Capacitance (Ciss) @ Vds 1884pF @ 75V
Power - Max1.8W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs53nC @ 10V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS2070N3
FDS2070N3
FDS2070N3CT ND
FDS2070N3CTND
FDS2070N3CT



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