FDS2170N3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Package / Case : SOIC-8
Configuration : Single Triple Source
Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 0.128 Ohms


Features:

• 3.0 A, 200 V. R_DS(ON) = 128 m @ V_GS = 10 V
• High performance trench technology for extremely low R_DS(ON)
• High power and current handling capability
• Fast switching, low gate charge (26nC typical)
• FLMP SO-8 package: Enhanced thermal performance in industry-standard package size


Application

• Synchronous rectifier
• DC/DC converter


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	200	V
VGSS	Gate-Source Voltage	± 20
ID	Drain Current Continuous (Note 1a)               Pulsed	3.0	A
		20
PD	Power Dissipation (Note 1a)                 (Note 1b)	3.0	W
		1.8
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This FDS2170N3 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. FDS2170N3 has been optimized for "low side" synchronous rectifier operation, providing an extremely low R_DS(ON) in a small package.


Parameters:

Technical/Catalog Information	FDS2170N3
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	128 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds	1292pF @ 100V
Power - Max	1.8W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	36nC @ 10V
Package / Case	8-SOIC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS2170N3 FDS2170N3 FDS2170N3CT ND FDS2170N3CTND FDS2170N3CT