MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:SOP-8 D/C:09+
FDS6902, FDS6903A, FDS6910 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor (VA)
Package Cooled: SOP-8
D/C: 09+
Description: MOSFET N-CH DUAL 30V 7.5A 8SOIC
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PDF/DataSheet Download
Datasheet: FDS100BA60
File Size: 301116 KB
Manufacturer: SANREX [SanRex Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDS100BA60
File Size: 301116 KB
Manufacturer: SANREX [SanRex Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDS6910
File Size: 115478 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FDS6910 |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 7.5A |
| Rds On (Max) @ Id, Vgs | 13 mOhm @ 7.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1130pF @ 15V |
| Power - Max | 900mW |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 24nC @ 10V |
| Package / Case | SO-8 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDS6910 FDS6910 FDS6910CT ND FDS6910CTND FDS6910CT |
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | -30 | V |
| VGSS | Gate-Source Voltage | ±20 | V |
| ID | Drain Current - Continuous (Note 1a) - Pulsed |
-7.5 | A |
| -20 | |||
| PD | Power Dissipation for Dual Operation (Note 1) |
2 | W |
| Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
1.6 | ||
| 1.0 | |||
| 0.9 | |||
| TJ, Tstg | Operating and Storage Junction Temperature Range | -55 to +150 | W |
| Thermal Characteristics | |||
| RJA | Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) |
78 | °C/W |
| 40 | |||
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