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These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDS6961A Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current Continuous (Note 1a)
3.5
A
Pulsed
14
PD
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation (Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C
FDS6961A Features
3.5 A, 30 V. RDS(ON) = 0.090 @ VGS = 10 V RDS(ON) = 0.140 @ VGS = 4.5 V. Fast switching speed. Low gate charge (2.1nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability.