MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOIC D/C:2010+
FDS6984AS, FDS6984AS_NL, FDS6984AS-NL Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: SOIC
D/C: 2010+
Description: MOSFET SCHOTTKY N-CH DUAL 8-SOIC
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PDF/DataSheet Download
Datasheet: FDS6984AS
File Size: 153908 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDS6984AS_NL
File Size: 153908 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDS100BA60
File Size: 301116 KB
Manufacturer: SANREX [SanRex Corporation]
Download : Click here to Download
| Technical/Catalog Information | FDS6984AS |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 5.5A, 8.5A |
| Rds On (Max) @ Id, Vgs | 31 mOhm @ 5.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 420pF @ 15V |
| Power - Max | 900mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 11nC @ 10V |
| Package / Case | SO-8 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDS6984AS FDS6984AS |
The FDS6984AS is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6984AS contains two
unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency.
The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low- side switch (Q2) is optimized to reduce conduction losses. Q2 also includes a patented combination of a MOSFET monolithically integrated with a Schottky diode.
| Symbol | Parameter | Q2 | Q1 | Units |
| VDSS | Drain-Source Voltage | 30 | 30 | V |
| VGSS | Gate-Source Voltage | ±20 | ±16 | V |
| ID | Drain Current - Continuous (Note 1a) - Pulsed |
8.5 | 5.5 | A |
| 30 | 20 | |||
| PD | Power Dissipation for Dual Operation | 2 | W | |
|
Power Dissipation for Single Operation |
1.6 | |||
| 1 | ||||
| 0.9 | ||||
| TJ, TSTG | Operating and Storage Junction Temperature Range | -55 to +150 | °C | |
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