MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOP-8 D/C:NULL
FDS6986, FDS6986AS, FDS6986AS-NL Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: SOP-8
D/C: NULL
Description: MOSFET N-CH DUAL 30V 8SOIC
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PDF/DataSheet Download
Datasheet: FDS6986AS
File Size: 181351 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDS6986AS
File Size: 181351 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDS100BA60
File Size: 301116 KB
Manufacturer: SANREX [SanRex Corporation]
Download : Click here to Download
| Technical/Catalog Information | FDS6986AS |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 6.5A, 7.9A |
| Rds On (Max) @ Id, Vgs | 29 mOhm @ 6.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 550pF @ 10V |
| Power - Max | 900mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 17nC @ 10V |
| Package / Case | SO-8 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDS6986AS FDS6986AS |
The FDS6986AS is designed to replace two single SO- 8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6986AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency.
The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.
| Symbol |
Parameter |
Q2 |
Q1 |
Units |
| VDSS | Drain-Source Voltage |
30 |
30 |
V |
| VGSS | Gate-Source Voltage |
±20 |
±16 |
V |
| ID | Drain Current - Continuous (Note 1a) - Pulsed |
7.9 |
6.5 |
|
|
30 |
20 | |||
| PD | Power Dissipation for Dual Operation |
2 |
A | |
| Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
1.6 |
W | ||
|
1 | ||||
|
0.9 | ||||
| TJ, TSTG | Operating and Storage Junction Temperature Range |
-55to+150 |
°C | |
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