MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOP-8 D/C:09+
FDS7064SN3, FDS7066, FDS7066ALR Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: SOP-8
D/C: 09+
Description: MOSFET N-CHAN 30V 16A 8SOIC
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PDF/DataSheet Download
Datasheet: FDS7064SN3
File Size: 199763 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDS7066ASN3
File Size: 147851 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDS100BA60
File Size: 301116 KB
Manufacturer: SANREX [SanRex Corporation]
Download : Click here to Download
| Technical/Catalog Information | FDS7064SN3 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 16A |
| Rds On (Max) @ Id, Vgs | 8 mOhm @ 16A, 10V |
| Input Capacitance (Ciss) @ Vds | 2800pF @ 15V |
| Power - Max | 1.5W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 35nC @ 5V |
| Package / Case | 8-SOIC |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDS7064SN3 FDS7064SN3 FDS7064SN3TR ND FDS7064SN3TRND FDS7064SN3TR |
The FDS7064SN3 is designed to improve the efficiency of Buck Regulators. Used as the Synchronous rectifier, (Low side MOSFET), losses can be reduced, not only in this device, but also in the Control switch, (High side MOSFET). After the low side MOSFET turns off, reverse recovery current in the body diode is dissipated in the High Side device. A Discrete Schottky diode in parallel with the Low Side MOSFET can lower the reverse recovery current, but parasitic PCB and Package Inductance reduce the effectiveness of the Schottky. SyncFETTM technology reduces this inductance to a minimum by providing a monolithic solution (MOSFET and Schottky in the same die), resulting in optimum performance.
| Symbol |
Parameter |
Ratings |
Units |
| VDSS | Drain-Source Voltage |
30 |
V |
| VGSS | Gate-Source Voltage |
±16 |
V |
| ID | Drain Current - Continuous (Note 1a) - Pulsed |
16 |
A |
|
60 | |||
| PD | Power Dissipation for Single Operation (Note 1a) (Note 1b) |
3.13 |
W |
|
1.5 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range |
-55to+150 |
°C |
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