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This N-Channel MOSFET in the thermally enhanced SO8 FLMP package has been designed specifically to improve the overall efficiency of DC/DC converters. Providing a balance of low RDS(ON) and Qg it is ideal for synchronous rectifier applications in both isolated and non-isolated topologies. It is also well suited for both high and low side switch applications in Point of Load converters.
FDS7288N3 Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current Continuous (Note 1a) Pulsed
20
A
60
PD
Power Dissipation for Single Operation (Note 1a) (Note 1b)
3.0
W
1.5
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C
FDS7288N3 Features
• 20.5 A, 30 V RDS(ON) = 4.5 mΩ @ VGS = 10 V RDS(ON) = 5.6 mΩ @ VGS = 4.5 V • High performance trench technology for extremely low RDS(ON) • Low Qg and Rg for fast switching • SO-8 FLMP for enhanced thermal performance in an industry-standard package outline.
FDS7288N3 Typical Application
• Secondary side Synchronous rectifier • Synchronous Buck VRM and POL Converters