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FDS78L05, FDS78L08, FDS8333C

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Info of FDS78L05
Info of FDS78L08
Info of FDS8333C

FDS78L05, FDS78L08, FDS8333C Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SMD-8 D/C:04 05

FDS78L05, FDS78L08, FDS8333C Datasheet download

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Part Number: FDS8333C

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: SMD-8

D/C: 04 05

Description: MOSFET N/P-CH 30V 4.1/3.4A 8SOIC

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FDS8333C Parameters

Technical/Catalog Information	FDS8333C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	4.1A, 3.4A
Rds On (Max) @ Id, Vgs	80 mOhm @ 4.1A, 10V
Input Capacitance (Ciss) @ Vds	282pF @ 10V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	6.6nC @ 4.5V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS8333C FDS8333C

FDS8333C General Description

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

FDS8333C Maximum Ratings

Symbol	Parameter	Q1	Q2	Units
V_DSS	Drain-Source Voltage	30	30	V
V_GSS	Gate-Source Voltage	±16	±20
I_D	Drain Current Continuous (Note 1a) Pulsed	4.1	3.4	A
		20	20
P_D	Power Dissipation for Dual Operation	2		W
	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	1.6
		1
		0.9
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +150		°C

FDS8333C Features

` Q1 4.1 A, 30V.     R_DS(ON) = 80 mW   @ V_GS = 10 V
                                R_DS(ON) = 130 mW @   V_GS = 4.5 V
` Q2 3.4 A, 30V. R_DS(ON) = 130 mW @ V_GS = 10 V
                                 R_DS(ON) = 200 mW @ V_GS= 4.5 V
` Low gate charge
` High performance trench technology for extremely low R_DS(ON).
` High power and handling capability in a widely used surface mount package.

FDS8333C Connection Diagram

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