MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOIC D/C:2010+
FDS8949, FDS8952, FDS8958 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: SOIC
D/C: 2010+
Description: MOSFET N/P-CH DUAL 30V 8SOIC
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PDF/DataSheet Download
Datasheet: FDS100BA60
File Size: 301116 KB
Manufacturer: SANREX [SanRex Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDS100BA60
File Size: 301116 KB
Manufacturer: SANREX [SanRex Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDS8958
File Size: 239086 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FDS8949 |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 6A |
| Rds On (Max) @ Id, Vgs | 29 mOhm @ 6A, 10V |
| Input Capacitance (Ciss) @ Vds | 955pF @ 20V |
| Power - Max | 2W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 11nC @ 5V |
| Package / Case | SO-8 |
| FET Feature | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDS8949 FDS8949 FDS8949DKR ND FDS8949DKRND FDS8949DKR |
| Technical/Catalog Information | FDS8958 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N and P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 7A, 5A |
| Rds On (Max) @ Id, Vgs | 28 mOhm @ 7A, 10V |
| Input Capacitance (Ciss) @ Vds | 789pF @ 10V |
| Power - Max | 900mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 26nC @ 10V |
| Package / Case | 8-SOIC |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDS8958 FDS8958 |
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
| Symbol | Parameter |
Ratings |
Units | ||
|
Q1 |
Q2 | ||||
| VDSS | Drain-Source Voltage |
30 |
30 |
V | |
| VGSS | Gate-Source Voltage |
±20 |
±20 | ||
| ID |
Drain Current |
Continuous (Note 1a) Pulsed |
7 |
-5 |
A |
|
20 |
-20 | ||||
| PD |
Power Dissipation for Dual Operation |
2 |
W | ||
| Power Dissipation for Single Operation |
(Note 1a) (Note 1b) (Note 1c) |
1.6 | |||
|
1 | |||||
|
0.9 | |||||
| TJ, TSTG | Operating and Storage Junction Temperature Range |
55 to +150 |
°C | ||
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