MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+
FDU8882, FDU8882_NL, FDU8896 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: .
D/C: 06+
Description: MOSFET N-CH 30V 94A I-PAK
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PDF/DataSheet Download
Datasheet: FDU8882
File Size: 284173 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDU8882_NL
File Size: 284173 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDU8896
File Size: 133230 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FDU8882 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 55A |
| Rds On (Max) @ Id, Vgs | 11.5 mOhm @ 35A, 10V |
| Input Capacitance (Ciss) @ Vds | 1260pF @ 15V |
| Power - Max | 55W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 33nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDU8882 FDU8882 |
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
30 ±20 55 50 12.6 Figure 4 41 55 0.37 -55 to 175 |
V V A A A A mJ W W/°C °C |
|
ID |
Drain Current Continuous (TC = 25°C, VGS = 10V) (Note 1) Continuous (TC = 25°C, VGS = 4.5V) (Note 1) Continuous (Tamb = 25°C, VGS = 10V, with RJA = 52°C/W) Pulsed | ||
|
EAS |
Single Pulse Avalanche Energy (Note 2) | ||
|
PD |
Power dissipation Derate above 25°C | ||
| TJ,TSTG | Operating and Storage Temperature |
| RJC RJA RJA |
Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area |
2.73 100 52 |
°C/W °C/W °C/W |
| Technical/Catalog Information | FDU8896 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 94A |
| Rds On (Max) @ Id, Vgs | 5.7 mOhm @ 35A, 10V |
| Input Capacitance (Ciss) @ Vds | 2525pF @ 15V |
| Power - Max | 80W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 60nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDU8896 FDU8896 |
The FDU8896 is a N-channel PowerTrench® MOSFET.It has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, lowrDS(ON) and fast switching speed.It can be used as DC/DC converters and its package is I-PAK.
There are some information about the features.(1)high performance trench technology for extremely low rDS(rDS(ON) is 5.7 m, VGS is 10 V, ID is 35 A)(ON);(2)low gate charge;(3)high power and current handling capability.
The following is its maximum ratings at TC is 25.(1):drain to source voltage(VDSS) is 30 V;(2):gate to source voltage(VGS) is ±20 V;(3):drain current is 94 A when VGS is 10 V;(4):single pulse avalanche energy(EAS) is 168 mJ;(5):derate above 25 is 0.53 W/;(6):both operating and storage temperature are from -55 to 175.(7):the minimum of drain to source breakdown voltage(BVDSS) is 30 V at the condition of ID is 250 mA, VGS is 0 V;(8):gate to source leakage current(IGSS) is ±100 nA at VGS is ±20 V(9):the typical input capacitance(CISS) is 2525 pF at VDS is 15 V,VGS is 0 V,f is 1 MHz;(10):the typical rise time is106 ns at VDD is 15 V,ID is 35 A,VGS is 10 V and RGS is 6.2 W.
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