Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
Combining Fairchild's advanced 1.5V specified PowerTrench process with state of the art BGA packaging, the FDZ291P minimizes both PCB space and RDS(ON) . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON) .
FDZ291P Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±18
V
ID
Drain Current Continuous (Note 1a) Pulsed
4.6
A
10
PD
Power Dissipation (Steady State) (Note 1a)
1.7
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
FDZ291P Features
* 4.6 A, 20 V RDS(ON) = 40 m @ VGS = 4.5 V RDS(ON) = 60 m @ VGS = 2.5 V RDS(ON) = 160 m @ VGS = 1.5 V * Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6 * Ultra-thin package: less than 0.85 mm height when mounted to PCB * Outstanding thermal transfer characteristics: 4 times better than SSOT-6 * Ultra-low Qg x RDS(ON) figure-of-merit * High power and current handling capability.
Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ293P minimizes both PCB space and R DS(ON) . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low R DS(ON) .
FDZ293P Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGS
Gate-Source Voltage
±12
V
ID
Drain Current Continuous (Note 1a) Pulsed
-4.6
A
-10
PD
Power Dissipation for Single Operation(Note 1a)
1.7
W
TJ, TSTG
Operating and Storage Temperature
-55 to 150
FDZ293P Features
`4.6 A, 20 V R DS(ON) = 46 mΩ @ VGS= 4.5 V RDS(ON)= 72 mΩ@ VGS= 2.5 V `Occupies only 2.25 mm2of PCB area. Less than 50% of the area of a SSOT-6 `Ultra-thin package: less than 0.85 mm height when mounted to PCB `Outstanding thermal transfer characteristics: 4 times better than SSOT-6 `Ultra-low Qg x RDS(ON)figure-of-merit `High power and current handling capability.
Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ294N minimizes both PCB space and RDS(ON) . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON) .
FDZ294N Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current Continuous (Note 1a) Pulsed
6
A
10
PD
Power Dissipation (Steady State) (Note 1a)
1.7
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
FDZ294N Features
* 6 A, 20 V RDS(ON) = 23 m @ VGS = 4.5 V RDS(ON) = 34 m @ VGS = 2.5 V * Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6 * Ultra-thin package: less than 0.85mm height when mounted to PCB * Outstanding thermal transfer characteristics: 4 times better than SSOT-6 * Ultra-low Qg x RDS(ON) figure-of-merit * High power and current handling capability.
