FDZ206P

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.0095 Ohms
Package / Case : BGA


Features:

*  13 A, 20 V.  R_DS(ON) = 9.5 m @ V_GS = 4.5 V  R_DS(ON) = 14.5 m @ V_GS = 2.5 V
*  Occupies only 14 mm²  of PCB area. Only 42% of the area of SO-8
*  Ultra-thin package:  less than 0.80 mm height whe mounted to PCB
*  0.65 mm ball pitch
*  3.5 x 4 mm²  footprint
*  High power and current handling capability


Application

*  Battery management 
*  Load switch
*  Battery protection


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current Continuous (Note 1a) Pulsed	-13	A
		60
PD	Power Dissipation (Steady State) (Note 1a)	2.2	W
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

Combining  Fairchild's  advanced  2.5V  specified PowerTrench  process  with  state  of  the  art  BGA packaging, the FDZ206P minimizes both PCB space and  R_DS(ON) .    This  BGA  MOSFET  embodies  a breakthrough in packaging technology  which enables the  device  to  combine  excellent  thermal  transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low R_DS(ON) .  

Parameters:

Technical/Catalog Information	FDZ206P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	13A
Rds On (Max) @ Id, Vgs	9.5 mOhm @ 13A, 4.5V
Input Capacitance (Ciss) @ Vds	4280pF @ 10V
Power - Max	2.2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	53nC @ 4.5V
Package / Case	BGA
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDZ206P FDZ206P