FGB3040CS, FGB30N6S2, FGB30N6S2D

The FGB3040CS is an lgnition IGBT that offers outstanding SCIS capability along with a ratiometric emitter current sensing capability. This sensing is based on a emitter active area ratio of 200:1. The output is provided through a fourth (sense) lead. This signal provides a current level that is proportional to the main collector to emitter current. The effective ratio as measured on the sense lead is a function of the sense output, the collector current and the gate to emitter drive voltage.

      The FGB30N6S2 is Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are specially designed for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential.SMPS II LGC devices are widely used in the fields of Power Factor Correction (PFC) circuits,full bridge topologies,half bridge topologies,push-Pull circuits,uninterruptible power supplies and zero voltage and zero current switching circuits.
      Here you can get some information about the features. The 100kHz operation is at 390V, 14A.The 200kHZ operation is at 390V,9A.Besides,it has 600V switching SOA capability.The typical fall time is 90ns at TJ = 125oC.The low gate charge is 23 nC at V_GE = 15V.The low plateau voltage is 6.5V typical.The UIS rated is 150mJ.What's more,it has low conduction loss.
      You have to understand the maximum ratings at TC= 25 if you want to purchase the product.The BV_CES (Collector to Emitter Breakdown Voltage) is 600 V.The I_C25 (Collector Current Continuous,TC = 25) is 45 A.The I_C110 (Collector Current Continuous,TC = 110) is 20 A.The I_CM (Collector Current Pulsed) is 108 A.The V_GES (Gate to Emitter Voltage Continuous) is ±20 V.The V_GEM (Gate to Emitter Voltage Pulsed) is ±30 V.The SSOA (Switching Safe Operating Area at T_J = 150) is 60A at 600V.The E_AS (Pulsed Avalanche Energy, I_CE = 20A, L = 1.3mH, V_DD = 50V) is 150 mJ.The PD (Power Dissipation Total T_C = 25°C) is 167 W.The Power Dissipation Derating is 1.33 W/ at T_C > 25.The T_J (Operating Junction Temperature Range) is from -55 to 150 .The T_STG (Storage Junction Temperature Range) is from -55 to 150 .
      The following is about the electrical characteristics at T_J = 25.The Minimum BV_CES (Collector to Emitter Breakdown Voltage) is 600 V at I_C = 250A, V_GE = 0.The Min BV_ECS (Emitter to Collector Breakdown Voltage) is 10 V and the Max. is 25 V at I_C = 10mA, V_GE = 0.The Max. IC_ES (Collector to Emitter Leakage Current) is 100 A at V_CE = 600V,T_J = 25 and 2 mA at V_CE = 600V,T_J = 125.The Max I_GES (Gate to Emitter Leakage Current) is ±250 nA at V_GE = ± 20V.The Typical V_CE(SAT) (Collector to Emitter Saturation Voltage)  is 2.0 V and the Max is 2.5V at I_C = 12A,V_GE = 15V,TJ = 25.The Typical V_CE(SAT) (Collector to Emitter Saturation Voltage)  is 1.7 V and the Max is 2.0 V at I_C = 12A,V_GE = 15V,T_J = 125.

The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and ava-anche capability (UIS). These LGC devices shorten delay imes, and reduce the power requirement of the gate drive.

These devices are ideally suited for high voltage switched mode power supply applications where low conduction oss, fast switching times and UIS capability are essential.SMPS II LGC devices have been specially designed for: