FGB30N6S2D

IGBT Transistors Dl 600V Size 3 N-Ch

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SeekIC No. : 00143808 Detail

FGB30N6S2D: IGBT Transistors Dl 600V Size 3 N-Ch

floor Price/Ceiling Price

Part Number:
FGB30N6S2D
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.95 V Maximum Gate Emitter Voltage : +/- 20 V
Gate-Emitter Leakage Current : +/- 250 nA Power Dissipation : 167 W
Maximum Operating Temperature : + 150 C Package / Case : TO-263AB-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.95 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Power Dissipation : 167 W
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-263AB-3


Features:

* 100kHz Operation at 390V, 14A
* 200kHZ Operation at 390V, 9A
* 600V Switching SOA Capability

* Typical Fall Time. . . . . . . . . . .90ns at TJ = 125
* Low Gate Charge  . . . . . . . . . 23nC at V GE = 15V

* Low Plateau Voltage  . . . . . . . . . . . . .6.5V Typical
* UIS Rated  . . . . . . . . . . . . . . . . . . . . . . . . .150mJ
* Low Conduction Loss



Pinout

  Connection Diagram


Specifications


Symbol Parameter Ratings Units
BVCES Collector to Emitter Breakdown Voltage 600 V
IC25 Collector Current Continuous, TC = 25°C 45 A
IC110 Collector Current Continuous, TC = 110°C 20 A
ICM Collector Current Pulsed (Note 1) 108 A
VGES Gate to Emitter Voltage Continuous ±20 V
VGEM Gate to Emitter Voltage Pulsed ±30 V
SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2 60A at 600V  
EAS Pulsed Avalanche Energy, ICE = 12A, L = 2mH, VDD = 50V 150 mJ
PD Power Dissipation Total TC = 25°C 167 W
  Power Dissipation Derating TC > 25°C 1.33 W/°C
TJ Operating Junction Temperature Range -55 to 150 °C
TSTG Storage Junction Temperature Range -55 to 150 °C



Description

The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and ava-anche capability (UIS). These LGC FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D shorten delay imes, and reduce the power requirement of the gate drive.

FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are ideally suited for high voltage switched mode power supply applications where low conduction oss, fast switching times and UIS capability are essential.SMPS II LGC FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D have been specially designed for: 




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