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FGB30N6S2DT

IGBT Transistors 600V N-Ch IGBT SMPS II Series

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SeekIC No. : 00143773 Detail

FGB30N6S2DT: IGBT Transistors 600V N-Ch IGBT SMPS II Series

FGB30N6S2DT Data Sheet

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Part Number:
FGB30N6S2DT
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.95 V Maximum Gate Emitter Voltage : +/- 20 V
Gate-Emitter Leakage Current : +/- 250 nA Power Dissipation : 167 W
Maximum Operating Temperature : + 150 C Package / Case : TO-263AB-3
Packaging : Reel    

Description

Continuous Collector Current at 25 C :
Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.95 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Power Dissipation : 167 W
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-263AB-3


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