FM250, FM25040, FM25040-9 Selling Leads, Datasheet
MFG:RECTRON Package Cooled:SMB/DO-214AA D/C:09+
FM250, FM25040, FM25040-9 Datasheet download
Part Number: FM250
MFG: RECTRON
Package Cooled: SMB/DO-214AA
D/C: 09+
FM250, FM25040, FM25040-9
- Table of contents:
Info of FM250
Info of FM25040
Info of FM25040-9
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About FM250
PDF/DataSheet Download
Datasheet: FM250
File Size: 70492 KB
Manufacturer: FORMOSA [Formosa MS]
Download : Click here to Download
About FM25040
PDF/DataSheet Download
Datasheet: FM25040
File Size: 646964 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About FM20
PDF/DataSheet Download
Datasheet: FM20
File Size: 366164 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FM250 Maximum Ratings
| PARAMETER |
CONDITIONS |
Symbol | MIN | TYP | MAX | UNIT |
| Forward rectified current |
See Fig.1 | IO | 2.0 | A | ||
| Forward surge current | 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) | IFSM | 50 | V | ||
| Reverse current | VR = VRRM TA = 25 | IR | 0.5 | mA | ||
| VR = VRRM TA = 125 | 10 | mA | ||||
| Thermal resistance | Junction to ambient | RJA |
75 |
/W | ||
| Diode junction capacitance | f=1MHz and applied 4vDC reverse voltage | CJ | 160 | pF | ||
| Storage temperature | TSTG | -55 | + 150 |
FM250 Features
·Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound.
·For surface mounted applications.
·Exceeds environmental standards of MIL-S-19500 /228
·Low leakage current.
FM25040 General Description
The FM25040 is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides data retention for 10 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM. It's fast write and high write endurance makes it superior to other types of nonvolatile memory.
In-system operation of the FM25040 is very similar to other RAM based devices. Memory read- and writecycles require equal times. The FRAM memory, however, is nonvolatile due to its unique ferroelectric memory process. Unlike BBSRAM, the FM1808 is a truly monolithic nonvolatile memory. It provides the same functional benefits of a fast write without the serious disadvantages associated with modules and batteries or hybrid memory solutions.
These capabilities make the FM25040 ideal for nonvolatile memory applications requiring frequent or rapid writes in a bytewide environment. The availability of a true surface-mount package improves the manufacturability of new designs, while the DIP package facilitates simple design retrofits. The FM25040 offers guaranteed operation over an industrial temperature range of -40°C to +85°C.
FM25040 Maximum Ratings
| Description | Ratings |
| Ambient storage or operating temperature | -40°C to + 85°C |
| Voltage on any pin with respect to ground | -1.0V to +7.0V |
| D.C. output current on any pin | 5 mA |
| Lead temperature (Soldering, 10 seconds) | 300° C |
FM25040 Features
· Organized as 512 x 8 bits
· High endurance 10 Billion (1010) read/writes
· 10 year data retention at 85° C
· NoDelay™ write
· Advanced high-reliability ferroelectric process
· High endurance 10 Billion (1010) read/writes
· 10 year data retention at 85° C
· NoDelay™ write
· Advanced high-reliability ferroelectric process
FM25040 Typical Application
The versatility of FRAM technology fits into many diverse applications. Clearly the strength of higher write endurance and faster writes make FRAM superior to EEPROM in all but one-time
programmable applications. The advantage is most obvious in data collection environments where writes are frequent and data must be nonvolatile.
programmable applications. The advantage is most obvious in data collection environments where writes are frequent and data must be nonvolatile.
FM25040 Connection Diagram
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