FM20L08-60-T

The FM20L08-60-T is a 128K x 8 nonvolatile memory employing an advanced ferroelectric process. The features of FM20L08-60-T are as follows: (1)1Mbit Ferroelectric Nonvolatile RAM; (2)SRAM Replacement; (3)System Supervisor; (4)Superior to Battery-backed SRAM Modules; (5)Low Power Operation; (6)Industry Standard Configurations.

The following is about the absolute maximum ratings of FM20L08-60-T: (1)Power Supply Voltage with respect to VSS: -1.0V to +5.0 V; (2)Voltage on any pin with respect to VSS: -1.0V to +5.0 V and VIN < VDD+1.0V *; (3)Storage Temperature: -55°C to +125°C; (4)Lead Temperature (Soldering, 10 seconds): 300°C.

The electrical characteristics of the FM20L08-60-T are: (1)Power Supply voltage: 3.135 V min and 3.63 V max; (2)VDD Supply Current: 22 mA max; (3)Standby Current-CMOS: 25 A; (4)VDD trip point to assert (deassert) /LVL: 2.7V min and 3.0V max; (5)Input Leakage Current: ±1 A; (6)Output Leakage Current: ±1 A; (7)Input Low Voltage: -0.3 V min and 0.6V max; (8)Input High Voltage: 2.2V to VDD + 0.3 V.