FM20L08

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a
stress rating only, and the functional operation of the device at these or any other conditions above those listed in the operational section of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.

The FM20L08 is a 128K x 8 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or FRAM is nonvolatile, which means that data is retained after power is removed. FM20L08 provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and unlimited write endurance make FRAM superior to other types of memory.

In-system operation of the FM20L08 is very similar to other RAM devices and can be used as a drop-in replacement for standard SRAM. Read and write cycles may be triggered by /CE or simply by changing the address. The FRAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM20L08 ideal for nonvolatile memory applications requiring frequent or rapid writes in the form of an SRAM.

The FM20L08 includes a voltage monitor function that monitors the power supply voltage. It asserts an active-low signal that indicates the memory is writeprotected when VDD drops below a critical threshold.

The /LVL output of FM20L08 signal may also be suitable for resetting a host microcontroller. When the /LVL signal is low, the memory is protected against an inadvertent access and data corruption.

The FM20L08 also features software-controlled write protection. The memory array is divided into 8 uniform blocks, each of which can be individually write protected.

FM20L08 specifications are guaranteed over the temperature range 0°C to +70°C.