FM250HB-10F, FM25160, FM25160C Selling Leads, Datasheet
MFG:MITSUBISHI Package Cooled:MOS D/C:09+
FM250HB-10F, FM25160, FM25160C Datasheet download
Part Number: FM250HB-10F
MFG: MITSUBISHI
Package Cooled: MOS
D/C: 09+
FM250HB-10F, FM25160, FM25160C
- Table of contents:
Info of FM250HB-10F
Info of FM25160
Info of FM25160C
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About FM20
PDF/DataSheet Download
Datasheet: FM20
File Size: 366164 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FM25160
PDF/DataSheet Download
Datasheet: FM25160
File Size: 654322 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About FM20
PDF/DataSheet Download
Datasheet: FM20
File Size: 366164 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FM25160 General Description
The FM25160 is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM.It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.
Unlike serial EEPROMs, the FM25160 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array mere hundreds of nanoseconds after it has been successfully transferred to the device. The next bus cycle may c7ommence immediately. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The FM25160 is capable of supporting up to 1E10 read/write cycles -- far more than most systems will require from a serial memory.
These capabilities make the FM25160 ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss.
The FM25160 provides substantial benefits to users of serial EEPROM, in a hardware drop-in replacement. The FM25160 uses the high-speed SPI bus, which enhances the high-speed write capability of FRAM technology. It is guaranteed over an industrial temperature range of -40°C to +85°C.
FM25160 Maximum Ratings
| Description | Ratings |
|
Ambient storage or operating temperature |
-40°C to + 85°C |
|
Voltage on any pin with respect to ground |
-1.0V to +7.0V |
|
D.C. output current on any pin |
5 mA |
|
Lead temperature (Soldering, 10 seconds) |
300° C |
FM25160 Features
16K bit Ferroelectric Nonvolatile RAM
· Organized as 2,048 x 8 bits
· High endurance 10 Billion (1010) read/writes
· 10 year data retention at 85° C
· NoDelay™ write
· Advanced high-reliability ferroelectric process
· Organized as 2,048 x 8 bits
· High endurance 10 Billion (1010) read/writes
· 10 year data retention at 85° C
· NoDelay™ write
· Advanced high-reliability ferroelectric process
FM25160 Typical Application
The versatility of FRAM technology fits into many diverse applications. Clearly the strength of higher write endurance and faster writes make FRAM superior to EEPROM in all but one-time programmable applications. The advantage is most obvious in data collection environments where writes are frequent and data must be nonvolatile.
FM25160 Connection Diagram
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