FM2560M20, FM25640, FM25640A-GTR Selling Leads, Datasheet
MFG:FAI Package Cooled:SOP-20 D/C:01+
FM2560M20, FM25640, FM25640A-GTR Datasheet download
Part Number: FM2560M20
MFG: FAI
Package Cooled: SOP-20
D/C: 01+
FM2560M20, FM25640, FM25640A-GTR
- Table of contents:
Info of FM2560M20
Info of FM25640
Info of FM25640A-GTR
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About FM20
PDF/DataSheet Download
Datasheet: FM20
File Size: 366164 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FM25640
PDF/DataSheet Download
Datasheet: FM25640
File Size: 134227 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About FM20
PDF/DataSheet Download
Datasheet: FM20
File Size: 366164 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FM25640 General Description
The FM25640 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM.It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.
Unlike serial EEPROMs, the FM25640 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array mere hundreds of nanoseconds after it has been successfully transferred to the device. The next bus cycle may commence immediately. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The FM25640 is capable of supporting up to 1012-read/write cycles -far more than most systems will require from a serial memory.
These capabilities make the FM25640 ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss.
The FM25640 provides substantial benefits to users of serial EEPROM, in a hardware drop-in replacement. The FM25640 uses the high-speed SPI bus, which enhances the high-speed write capability of FRAM technology. The specifications are guaranteed over an industrial temperature range of -40°C to +85°C.
FM25640 Maximum Ratings
| Symbol | Description | Ratings |
| VIN,VOUT |
Voltage on Any Pin with Respect to VSS |
-1.0V to VDD+1V |
| IIN, IOUT |
DC Current on Any Pin |
5mA |
| TSTG |
Storage Temperature |
-55°C to + 125°C |
| TLEAD |
Lead temperature (Soldering, 10 seconds) |
300° C |
FM25640 Features
64K bit Ferroelectric Nonvolatile RAM
• Organized as 8,192 x 8 bits
• High Endurance 1 Trillion (1012) Read/Writes
• 10 Year Data Retention
• NoDelay™ Writes
• Advanced high-reliability ferroelectric process
• Organized as 8,192 x 8 bits
• High Endurance 1 Trillion (1012) Read/Writes
• 10 Year Data Retention
• NoDelay™ Writes
• Advanced high-reliability ferroelectric process
FM25640 Typical Application
The versatility of FRAM technology fits into many diverse applications. Clearly the strength of higher write endurance and faster writes make FRAM superior to EEPROM in all but one-time programmable applications. The advantage is most obvious in data collection environments where writes are frequent and data must be nonvolatile.
FM25640 Connection Diagram
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