FM25L16, FM25L16-DG, FM25L16-G/GTR Selling Leads, Datasheet
MFG:4 Package Cooled:7500 D/C:RamTRON
FM25L16, FM25L16-DG, FM25L16-G/GTR Datasheet download
Part Number: FM25L16
MFG: 4
Package Cooled: 7500
D/C: RamTRON
FM25L16, FM25L16-DG, FM25L16-G/GTR
- Table of contents:
Info of FM25L16
Info of FM25L16-DG
Info of FM25L16-G/GTR
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About FM25L16
PDF/DataSheet Download
Datasheet: FM25L16
File Size: 152915 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About FM25L16-DG
PDF/DataSheet Download
Datasheet: FM25L16-DG
File Size: 152915 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About FM20
PDF/DataSheet Download
Datasheet: FM20
File Size: 366164 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FM25L16 General Description
The FM25L16 is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.
Unlike serial EEPROMs, the FM25L16 performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling. The next bus cycle may start immediately. In addition, the product offers virtually unlimited write endurance,orders of magnitude more endurance than EEPROM.Also, FRAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits.
These capabilities make the FM25L16 ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss.
The FM25L16 provides substantial benefits to users of serial EEPROM as a hardware drop-in replacement. The FM25L16 uses the high-speed SPI bus, which enhances the high-speed write capability of FRAM technology. Device specifications are guaranteed over an industrial temperature range of -40°C to +85
FM25L16 Maximum Ratings
| Symbol | Description | Ratings |
| VDD |
Power Supply Voltage with respect to VSS |
-1.0V to +5.0V |
| VIN |
Voltage on any pin with respect to VSS |
-1.0V to +5.0V |
| TSTG |
Storage Temperature |
-55°C to + 125°C |
| TLEAD |
Lead temperature (Soldering, 10 seconds) |
300° C |
| VESD | Electrostatic Discharge Voltage - Human Body Model (JEDEC Std JESD22 A114-B) - Charged Device Model (JEDEC Std JESD22 C101-A) |
|
| Package Moisture Sensitivity Level |
MSL-1 |
FM25L16 Features
16K bit Ferroelectric Nonvolatile RAM
• Organized as 2,048 x 8 bits
• Unlimited Read/Write Cycles
• 45 Year Data Retention
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process
• Organized as 2,048 x 8 bits
• Unlimited Read/Write Cycles
• 45 Year Data Retention
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process
FM25L16 Connection Diagram
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