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FQA19N20C, FQA19N20L, FQA19N60

Table of contents:
Info of FQA19N20C
Info of FQA19N20L
Info of FQA19N60

FQA19N20C, FQA19N20L, FQA19N60 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:05+

FQA19N20C, FQA19N20L, FQA19N60 Datasheet download

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Part Number: FQA19N20C

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-247

D/C: 05+

Description: MOSFET N-CH 600V 18.5A TO-3P

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FQA19N20C Parameters

Technical/Catalog Information	FQA19N20C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	21.8A
Rds On (Max) @ Id, Vgs	170 mOhm @ 10.9A, 10V
Input Capacitance (Ciss) @ Vds	1080pF @ 25V
Power - Max	180W
Packaging	Tube
Gate Charge (Qg) @ Vgs	53nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA19N20C FQA19N20C

FQA19N20C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

FQA19N20C Maximum Ratings

Symbol	Parameter	FQA19N20C	Units
VDSS	Drain-Source Voltage	200	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	21.8	A
ID		13.8	A
IDM	Drain Current - Pulsed (Note 1)	87.2	A
VGSS	Gate-Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	433	mJ
IAR	Avalanche Current (Note 1)	21.8	A
EAR	Repetitive Avalanche Energy (Note 1)	18.0	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	180	W
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	1.45	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQA19N20C Features

• 21.8A, 200V, RDS(on) = 0.17Ω @VGS = 10 V
• Low gate charge ( typical 40.5 nC)
• Low Crss ( typical 85 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQA19N20L Parameters

Technical/Catalog Information	FQA19N20L
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	25A
Rds On (Max) @ Id, Vgs	140 mOhm @ 12.5A, 10V
Input Capacitance (Ciss) @ Vds	2200pF @ 25V
Power - Max	190W
Packaging	Tube
Gate Charge (Qg) @ Vgs	35nC @ 5V
Package / Case	TO-3P
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA19N20L FQA19N20L

FQA19N20L General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.

FQA19N20L Maximum Ratings

Symbol	Parameter	FQA19N20L	Units
V_DSS	Drain-Source Voltage	200	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	25	A
I_D		15.8	A
I_DM	Drain Current - Pulsed (Note 1)	100	A
V_GSS	Gate-Source Voltage	±20	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	250	mJ
I_AR	Avalanche Current (Note 1)	25	A
E_AR	Repetitive Avalanche Energy (Note 1)	19	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	190	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	1.52	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA19N20L Features

* 25A, 200V, R _DS(on) = 0.14 @V_GS = 10 V
* Low gate charge ( typical 27 nC)
* Low Crss ( typical 30 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating
* Low level gate drive requirement allowing direct
operation from logic drivers

FQA19N60 Parameters

Technical/Catalog Information	FQA19N60
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	18.5A
Rds On (Max) @ Id, Vgs	380 mOhm @ 9.3A, 10V
Input Capacitance (Ciss) @ Vds	3600pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	90nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA19N60 FQA19N60

FQA19N60 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild`s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.

FQA19N60 Maximum Ratings

Symbol	Parameter	FQA19N60	Units
V_DSS	Drain-Source Voltage	600	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	18.5	A
I_D		11.7	A
I_DM	Drain Current - Pulsed (Note 1)	74	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	1150	mJ
I_AR	Avalanche Current (Note 1)	18.5	A
E_AR	Repetitive Avalanche Energy (Note 1)	30	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	300	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	2.38	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA19N60 Features

* 18.5A, 600V, R_DS(on) = 0.38 @V_GS = 10 V
* Low gate charge ( typical 70 nC)
* Low Crss ( typical 35 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

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